An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band
We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 2...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2015-07, Vol.107 (4) |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 4 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 107 |
| creator | Zhao, S. Liu, X. Woo, S. Y. Kang, J. Botton, G. A. Mi, Z. |
| description | We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm2 at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires. |
| doi_str_mv | 10.1063/1.4927602 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22486387</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121490214</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-7dcf5c36eb81fabfde9cf17fdf040a288886788f36b87a3dae5a2608307ee2c13</originalsourceid><addsrcrecordid>eNpFkE9LAzEUxIMoWKsHv0HAk4et-bObZI-laBWKIug5ZLMvdsua1CRV-u2NtOAc3jDw4zEMQteUzCgR_I7O6pZJQdgJmlAiZcUpVadoQgjhlWgbeo4uUtqU2DDOJ-h17jGMYHMcrBnHPR78piTo8XxcmmfsjQ8_QwQ8mgQRhy1Ekwf_UTic14B3Y47mewgj5GqBO-P7S3TmzJjg6uhT9P5w_7Z4rFYvy6fFfFVZ3tBcyd66xnIBnaLOdK6H1joqXe9ITQxTRUIq5bjolDS8N9AYJojiRAIwS_kU3Rz-hpQHneyQwa5t8L7U14zVSnAl_6ltDF87SFlvwi76UkwzymjdknIKdXugbAwpRXB6G4dPE_eaEv23q6b6uCv_BS3xaTA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121490214</pqid></control><display><type>article</type><title>An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band</title><source>AIP Journals</source><source>Alma/SFX Local Collection</source><creator>Zhao, S. ; Liu, X. ; Woo, S. Y. ; Kang, J. ; Botton, G. A. ; Mi, Z.</creator><creatorcontrib>Zhao, S. ; Liu, X. ; Woo, S. Y. ; Kang, J. ; Botton, G. A. ; Mi, Z.</creatorcontrib><description>We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm2 at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4927602</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anderson localization ; Applied physics ; C band ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; CONFINEMENT ; DENSITY ; Epitaxial growth ; Heterostructures ; Laser beams ; LASERS ; MODULATION ; MOLECULAR BEAM EPITAXY ; Molecular beams ; NANOWIRES ; Quantum confinement ; RANDOMNESS ; Silicon substrates ; SUBSTRATES ; THREE-DIMENSIONAL CALCULATIONS ; THREE-DIMENSIONAL LATTICES ; THRESHOLD CURRENT ; Threshold currents ; ULTRAVIOLET RADIATION</subject><ispartof>Applied physics letters, 2015-07, Vol.107 (4)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-7dcf5c36eb81fabfde9cf17fdf040a288886788f36b87a3dae5a2608307ee2c13</citedby><cites>FETCH-LOGICAL-c351t-7dcf5c36eb81fabfde9cf17fdf040a288886788f36b87a3dae5a2608307ee2c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27915,27916</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22486387$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhao, S.</creatorcontrib><creatorcontrib>Liu, X.</creatorcontrib><creatorcontrib>Woo, S. Y.</creatorcontrib><creatorcontrib>Kang, J.</creatorcontrib><creatorcontrib>Botton, G. A.</creatorcontrib><creatorcontrib>Mi, Z.</creatorcontrib><title>An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band</title><title>Applied physics letters</title><description>We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm2 at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.</description><subject>Anderson localization</subject><subject>Applied physics</subject><subject>C band</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>CONFINEMENT</subject><subject>DENSITY</subject><subject>Epitaxial growth</subject><subject>Heterostructures</subject><subject>Laser beams</subject><subject>LASERS</subject><subject>MODULATION</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Molecular beams</subject><subject>NANOWIRES</subject><subject>Quantum confinement</subject><subject>RANDOMNESS</subject><subject>Silicon substrates</subject><subject>SUBSTRATES</subject><subject>THREE-DIMENSIONAL CALCULATIONS</subject><subject>THREE-DIMENSIONAL LATTICES</subject><subject>THRESHOLD CURRENT</subject><subject>Threshold currents</subject><subject>ULTRAVIOLET RADIATION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LAzEUxIMoWKsHv0HAk4et-bObZI-laBWKIug5ZLMvdsua1CRV-u2NtOAc3jDw4zEMQteUzCgR_I7O6pZJQdgJmlAiZcUpVadoQgjhlWgbeo4uUtqU2DDOJ-h17jGMYHMcrBnHPR78piTo8XxcmmfsjQ8_QwQ8mgQRhy1Ekwf_UTic14B3Y47mewgj5GqBO-P7S3TmzJjg6uhT9P5w_7Z4rFYvy6fFfFVZ3tBcyd66xnIBnaLOdK6H1joqXe9ITQxTRUIq5bjolDS8N9AYJojiRAIwS_kU3Rz-hpQHneyQwa5t8L7U14zVSnAl_6ltDF87SFlvwi76UkwzymjdknIKdXugbAwpRXB6G4dPE_eaEv23q6b6uCv_BS3xaTA</recordid><startdate>20150727</startdate><enddate>20150727</enddate><creator>Zhao, S.</creator><creator>Liu, X.</creator><creator>Woo, S. Y.</creator><creator>Kang, J.</creator><creator>Botton, G. A.</creator><creator>Mi, Z.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150727</creationdate><title>An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band</title><author>Zhao, S. ; Liu, X. ; Woo, S. Y. ; Kang, J. ; Botton, G. A. ; Mi, Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-7dcf5c36eb81fabfde9cf17fdf040a288886788f36b87a3dae5a2608307ee2c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Anderson localization</topic><topic>Applied physics</topic><topic>C band</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>CONFINEMENT</topic><topic>DENSITY</topic><topic>Epitaxial growth</topic><topic>Heterostructures</topic><topic>Laser beams</topic><topic>LASERS</topic><topic>MODULATION</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Molecular beams</topic><topic>NANOWIRES</topic><topic>Quantum confinement</topic><topic>RANDOMNESS</topic><topic>Silicon substrates</topic><topic>SUBSTRATES</topic><topic>THREE-DIMENSIONAL CALCULATIONS</topic><topic>THREE-DIMENSIONAL LATTICES</topic><topic>THRESHOLD CURRENT</topic><topic>Threshold currents</topic><topic>ULTRAVIOLET RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, S.</creatorcontrib><creatorcontrib>Liu, X.</creatorcontrib><creatorcontrib>Woo, S. Y.</creatorcontrib><creatorcontrib>Kang, J.</creatorcontrib><creatorcontrib>Botton, G. A.</creatorcontrib><creatorcontrib>Mi, Z.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, S.</au><au>Liu, X.</au><au>Woo, S. Y.</au><au>Kang, J.</au><au>Botton, G. A.</au><au>Mi, Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band</atitle><jtitle>Applied physics letters</jtitle><date>2015-07-27</date><risdate>2015</risdate><volume>107</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm2 at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4927602</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2015-07, Vol.107 (4) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22486387 |
| source | AIP Journals; Alma/SFX Local Collection |
| subjects | Anderson localization Applied physics C band CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONFINEMENT DENSITY Epitaxial growth Heterostructures Laser beams LASERS MODULATION MOLECULAR BEAM EPITAXY Molecular beams NANOWIRES Quantum confinement RANDOMNESS Silicon substrates SUBSTRATES THREE-DIMENSIONAL CALCULATIONS THREE-DIMENSIONAL LATTICES THRESHOLD CURRENT Threshold currents ULTRAVIOLET RADIATION |
| title | An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T18%3A59%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20electrically%20injected%20AlGaN%20nanowire%20laser%20operating%20in%20the%20ultraviolet-C%20band&rft.jtitle=Applied%20physics%20letters&rft.au=Zhao,%20S.&rft.date=2015-07-27&rft.volume=107&rft.issue=4&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4927602&rft_dat=%3Cproquest_osti_%3E2121490214%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2121490214&rft_id=info:pmid/&rfr_iscdi=true |