Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt cry...

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Veröffentlicht in:	Applied physics letters 2015-11, Vol.107 (20)
Hauptverfasser:	Lupina, L., Zoellner, M. H., Niermann, T., Dietrich, B., Capellini, G., Thapa, S. B., Haeberlen, M., Lehmann, M., Storck, P., Schroeder, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Buffer layers BUFFERS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS Crystal structure Crystallinity Epitaxial growth EV RANGE 01-10 GALLIUM NITRIDES Lattice matching LAYERS MOLECULAR BEAM EPITAXY MONOCRYSTALS PLASMA RAMAN SPECTROSCOPY SCANDIUM NITRIDES SCANDIUM OXIDES SILICON Silicon substrates SUBSTRATES Thin films TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION Yttrium oxide YTTRIUM OXIDES
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