Elimination of surface band bending on N-polar InN with thin GaN capping

0.5–1 μm thick InN {0001} films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to const...

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Veröffentlicht in:	Applied physics letters 2015-11, Vol.107 (19)
Hauptverfasser:	Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Capping CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRON SPECTROSCOPY ELECTRONIC STRUCTURE Epitaxial growth GALLIUM NITRIDES INDIUM NITRIDES INTERFACES LAYERS MOLECULAR BEAM EPITAXY OXIDATION OXIDES PIEZOELECTRICITY Polarity POLARIZATION SIGNALS Spectrum analysis SURFACE ENERGY SURFACES Thick films X RADIATION
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