Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet
Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm conf...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2015-06, Vol.106 (25) |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 25 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 106 |
| creator | Schmidt, Gordon Berger, Christoph Veit, Peter Metzner, Sebastian Bertram, Frank Bläsing, Jürgen Dadgar, Armin Strittmatter, André Christen, Jürgen Callsen, Gordon Kalinowski, Stefan Hoffmann, Axel |
| description | Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay. |
| doi_str_mv | 10.1063/1.4922919 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22483089</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124742469</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-3e12322853f66802f85224419fb28e37e676c17f343b4edbb3b75c001e2eb3403</originalsourceid><addsrcrecordid>eNpVkc1u1TAQhS0EEpfCgjcYiRWLtP7LH7uqlIJUwQbWluOMua4S-9bjVOK5eEEctRLqyrLnnO_MeBh7L_i54J26EOd6lHIU4wt2ELzvGyXE8JIdOOeq6cZWvGZviO7qtZVKHdjfzyGjK4APYcboEJIHCvH3gnC_2Vi2FeZUy2sgCimCz2mFG_sdAi02zgQ-5RVnsAXKMaOdqxfmWkzOlmog2HYcRBsTOVux9f2Y5rRsa4hIbg_9BJdAacvP4k_HVHZ_iJWMsC0l24eQFixv2StvF8J3T-cZ-_Xl-ufV1-b2x823q8vbxqlWlEahkErKoVW-6wYu_dBKqbUY_SQHVD12fedE75VWk8Z5mtTUt45zgRInpbk6Yx8euYlKMORCQXd0Kcb6YaaiBsWH8b_qlNP9hlTMXR0l1saMFFL3WupuV318VLmciDJ6c8phtfmPEdzsmzPCPG1O_QPkQI06</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124742469</pqid></control><display><type>article</type><title>Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Schmidt, Gordon ; Berger, Christoph ; Veit, Peter ; Metzner, Sebastian ; Bertram, Frank ; Bläsing, Jürgen ; Dadgar, Armin ; Strittmatter, André ; Christen, Jürgen ; Callsen, Gordon ; Kalinowski, Stefan ; Hoffmann, Axel</creator><creatorcontrib>Schmidt, Gordon ; Berger, Christoph ; Veit, Peter ; Metzner, Sebastian ; Bertram, Frank ; Bläsing, Jürgen ; Dadgar, Armin ; Strittmatter, André ; Christen, Jürgen ; Callsen, Gordon ; Kalinowski, Stefan ; Hoffmann, Axel</creatorcontrib><description>Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4922919</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM NITRIDES ; Aluminum nitride ; Applied physics ; CATHODOLUMINESCENCE ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DISLOCATIONS ; Electrons ; GALLIUM NITRIDES ; Islands ; LINE WIDTHS ; Photon emission ; PHOTONS ; QUANTUM DOTS ; QUANTUM WELLS ; SPECTROSCOPY ; Threading dislocations ; Time lag ; TRANSMISSION ELECTRON MICROSCOPY ; ULTRAVIOLET RADIATION ; WAVELENGTHS</subject><ispartof>Applied physics letters, 2015-06, Vol.106 (25)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-3e12322853f66802f85224419fb28e37e676c17f343b4edbb3b75c001e2eb3403</citedby><cites>FETCH-LOGICAL-c351t-3e12322853f66802f85224419fb28e37e676c17f343b4edbb3b75c001e2eb3403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22483089$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Schmidt, Gordon</creatorcontrib><creatorcontrib>Berger, Christoph</creatorcontrib><creatorcontrib>Veit, Peter</creatorcontrib><creatorcontrib>Metzner, Sebastian</creatorcontrib><creatorcontrib>Bertram, Frank</creatorcontrib><creatorcontrib>Bläsing, Jürgen</creatorcontrib><creatorcontrib>Dadgar, Armin</creatorcontrib><creatorcontrib>Strittmatter, André</creatorcontrib><creatorcontrib>Christen, Jürgen</creatorcontrib><creatorcontrib>Callsen, Gordon</creatorcontrib><creatorcontrib>Kalinowski, Stefan</creatorcontrib><creatorcontrib>Hoffmann, Axel</creatorcontrib><title>Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet</title><title>Applied physics letters</title><description>Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.</description><subject>ALUMINIUM NITRIDES</subject><subject>Aluminum nitride</subject><subject>Applied physics</subject><subject>CATHODOLUMINESCENCE</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DISLOCATIONS</subject><subject>Electrons</subject><subject>GALLIUM NITRIDES</subject><subject>Islands</subject><subject>LINE WIDTHS</subject><subject>Photon emission</subject><subject>PHOTONS</subject><subject>QUANTUM DOTS</subject><subject>QUANTUM WELLS</subject><subject>SPECTROSCOPY</subject><subject>Threading dislocations</subject><subject>Time lag</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>ULTRAVIOLET RADIATION</subject><subject>WAVELENGTHS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpVkc1u1TAQhS0EEpfCgjcYiRWLtP7LH7uqlIJUwQbWluOMua4S-9bjVOK5eEEctRLqyrLnnO_MeBh7L_i54J26EOd6lHIU4wt2ELzvGyXE8JIdOOeq6cZWvGZviO7qtZVKHdjfzyGjK4APYcboEJIHCvH3gnC_2Vi2FeZUy2sgCimCz2mFG_sdAi02zgQ-5RVnsAXKMaOdqxfmWkzOlmog2HYcRBsTOVux9f2Y5rRsa4hIbg_9BJdAacvP4k_HVHZ_iJWMsC0l24eQFixv2StvF8J3T-cZ-_Xl-ufV1-b2x823q8vbxqlWlEahkErKoVW-6wYu_dBKqbUY_SQHVD12fedE75VWk8Z5mtTUt45zgRInpbk6Yx8euYlKMORCQXd0Kcb6YaaiBsWH8b_qlNP9hlTMXR0l1saMFFL3WupuV318VLmciDJ6c8phtfmPEdzsmzPCPG1O_QPkQI06</recordid><startdate>20150622</startdate><enddate>20150622</enddate><creator>Schmidt, Gordon</creator><creator>Berger, Christoph</creator><creator>Veit, Peter</creator><creator>Metzner, Sebastian</creator><creator>Bertram, Frank</creator><creator>Bläsing, Jürgen</creator><creator>Dadgar, Armin</creator><creator>Strittmatter, André</creator><creator>Christen, Jürgen</creator><creator>Callsen, Gordon</creator><creator>Kalinowski, Stefan</creator><creator>Hoffmann, Axel</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150622</creationdate><title>Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet</title><author>Schmidt, Gordon ; Berger, Christoph ; Veit, Peter ; Metzner, Sebastian ; Bertram, Frank ; Bläsing, Jürgen ; Dadgar, Armin ; Strittmatter, André ; Christen, Jürgen ; Callsen, Gordon ; Kalinowski, Stefan ; Hoffmann, Axel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-3e12322853f66802f85224419fb28e37e676c17f343b4edbb3b75c001e2eb3403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ALUMINIUM NITRIDES</topic><topic>Aluminum nitride</topic><topic>Applied physics</topic><topic>CATHODOLUMINESCENCE</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DISLOCATIONS</topic><topic>Electrons</topic><topic>GALLIUM NITRIDES</topic><topic>Islands</topic><topic>LINE WIDTHS</topic><topic>Photon emission</topic><topic>PHOTONS</topic><topic>QUANTUM DOTS</topic><topic>QUANTUM WELLS</topic><topic>SPECTROSCOPY</topic><topic>Threading dislocations</topic><topic>Time lag</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>ULTRAVIOLET RADIATION</topic><topic>WAVELENGTHS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schmidt, Gordon</creatorcontrib><creatorcontrib>Berger, Christoph</creatorcontrib><creatorcontrib>Veit, Peter</creatorcontrib><creatorcontrib>Metzner, Sebastian</creatorcontrib><creatorcontrib>Bertram, Frank</creatorcontrib><creatorcontrib>Bläsing, Jürgen</creatorcontrib><creatorcontrib>Dadgar, Armin</creatorcontrib><creatorcontrib>Strittmatter, André</creatorcontrib><creatorcontrib>Christen, Jürgen</creatorcontrib><creatorcontrib>Callsen, Gordon</creatorcontrib><creatorcontrib>Kalinowski, Stefan</creatorcontrib><creatorcontrib>Hoffmann, Axel</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schmidt, Gordon</au><au>Berger, Christoph</au><au>Veit, Peter</au><au>Metzner, Sebastian</au><au>Bertram, Frank</au><au>Bläsing, Jürgen</au><au>Dadgar, Armin</au><au>Strittmatter, André</au><au>Christen, Jürgen</au><au>Callsen, Gordon</au><au>Kalinowski, Stefan</au><au>Hoffmann, Axel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet</atitle><jtitle>Applied physics letters</jtitle><date>2015-06-22</date><risdate>2015</risdate><volume>106</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4922919</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2015-06, Vol.106 (25) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22483089 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ALUMINIUM NITRIDES Aluminum nitride Applied physics CATHODOLUMINESCENCE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DISLOCATIONS Electrons GALLIUM NITRIDES Islands LINE WIDTHS Photon emission PHOTONS QUANTUM DOTS QUANTUM WELLS SPECTROSCOPY Threading dislocations Time lag TRANSMISSION ELECTRON MICROSCOPY ULTRAVIOLET RADIATION WAVELENGTHS |
| title | Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T07%3A40%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20evidence%20of%20single%20quantum%20dot%20emission%20from%20GaN%20islands%20formed%20at%20threading%20dislocations%20using%20nanoscale%20cathodoluminescence:%20A%20source%20of%20single%20photons%20in%20the%20ultraviolet&rft.jtitle=Applied%20physics%20letters&rft.au=Schmidt,%20Gordon&rft.date=2015-06-22&rft.volume=106&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4922919&rft_dat=%3Cproquest_osti_%3E2124742469%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124742469&rft_id=info:pmid/&rfr_iscdi=true |