Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors
In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and o...
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Veröffentlicht in: | Applied physics letters 2015-10, Vol.107 (15) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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