Low resistivity W{sub x}V{sub 1−x}O{sub 2}-based multilayer structure with high temperature coefficient of resistance for microbolometer applications

Materials that exhibit semiconductor-to-metal phase transition (SMT) are commonly used as sensing layers for the fabrication of uncooled microbolometers. The development of highly responsive microbolometers would benefit from using a sensing material that possesses a large thermal coefficient of res...

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Veröffentlicht in:	Applied physics letters 2015-10, Vol.107 (14)
Hauptverfasser:	Émond, Nicolas, Hendaoui, Ali, Chaker, Mohamed
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINATES BOLOMETERS CAMERAS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DOPED MATERIALS LANTHANUM COMPOUNDS LAYERS PHASE TRANSFORMATIONS SEMICONDUCTOR MATERIALS TEMPERATURE DEPENDENCE TEMPERATURE MEASUREMENT TEMPERATURE RANGE 0273-0400 K THIN FILMS TUNGSTEN VANADIUM OXIDES
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