Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates
Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal qual...
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| Veröffentlicht in: | Applied physics letters 2015-09, Vol.107 (13) |
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| container_issue | 13 |
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| container_title | Applied physics letters |
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| creator | Nakata, M. Toko, K. Jevasuwan, W. Fukata, N. Saitoh, N. Yoshizawa, N. Suemasu, T. |
| description | Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices. |
| doi_str_mv | 10.1063/1.4932054 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22482175</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124096724</sourcerecordid><originalsourceid>FETCH-LOGICAL-c430t-27ba5e9e32ce84dcc4419263646f05bd06c5395715f04ad027ac69b179d385dd3</originalsourceid><addsrcrecordid>eNpFkM1Kw0AYRQdRsFYXvsGAKxep859kKcU_KOiirofJzJcmpWbqfFMkb2-kBVeXC4fL5RByy9mCMyMf-ELVUjCtzsiMs7IsJOfVOZkxxmRhas0vyRXidqpaSDkjH-vkBmwhFW0CoDgOuQPskcaWdv2m2400pgAJAn0BOrgh_vQJqEvJjRM00M3OIVI8NJiTy4DX5KJ1O4SbU87J5_PTevlarN5f3paPq8IryXIhysZpqEEKD5UK3ivFa2GkUaZlugnMeC1rXXLdMuUCE6Xzpm54WQdZ6RDknNwddyPm3qLvM_jOx2EAn60QqhK81P_UPsXvA2C223hIw3TMCi4Uq00p1ETdHymfImKC1u5T_-XSaDmzf1ottyet8hez2mhw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124096724</pqid></control><display><type>article</type><title>Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Nakata, M. ; Toko, K. ; Jevasuwan, W. ; Fukata, N. ; Saitoh, N. ; Yoshizawa, N. ; Suemasu, T.</creator><creatorcontrib>Nakata, M. ; Toko, K. ; Jevasuwan, W. ; Fukata, N. ; Saitoh, N. ; Yoshizawa, N. ; Suemasu, T.</creatorcontrib><description>Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4932054</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Arrays ; Chemical synthesis ; CHEMICAL VAPOR DEPOSITION ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; CRYSTALLIZATION ; CRYSTALS ; DENSITY ; DISLOCATIONS ; Germanium ; GLASS ; Glass substrates ; Insulators ; Morphology ; Nanotechnology devices ; NANOWIRES ; Organic chemistry ; STACKING FAULTS ; SUBSTRATES ; SYNTHESIS ; TRANSMISSION ELECTRON MICROSCOPY ; VAPORS</subject><ispartof>Applied physics letters, 2015-09, Vol.107 (13)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-27ba5e9e32ce84dcc4419263646f05bd06c5395715f04ad027ac69b179d385dd3</citedby><cites>FETCH-LOGICAL-c430t-27ba5e9e32ce84dcc4419263646f05bd06c5395715f04ad027ac69b179d385dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22482175$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Nakata, M.</creatorcontrib><creatorcontrib>Toko, K.</creatorcontrib><creatorcontrib>Jevasuwan, W.</creatorcontrib><creatorcontrib>Fukata, N.</creatorcontrib><creatorcontrib>Saitoh, N.</creatorcontrib><creatorcontrib>Yoshizawa, N.</creatorcontrib><creatorcontrib>Suemasu, T.</creatorcontrib><title>Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates</title><title>Applied physics letters</title><description>Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.</description><subject>Applied physics</subject><subject>Arrays</subject><subject>Chemical synthesis</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>CRYSTALLIZATION</subject><subject>CRYSTALS</subject><subject>DENSITY</subject><subject>DISLOCATIONS</subject><subject>Germanium</subject><subject>GLASS</subject><subject>Glass substrates</subject><subject>Insulators</subject><subject>Morphology</subject><subject>Nanotechnology devices</subject><subject>NANOWIRES</subject><subject>Organic chemistry</subject><subject>STACKING FAULTS</subject><subject>SUBSTRATES</subject><subject>SYNTHESIS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>VAPORS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFkM1Kw0AYRQdRsFYXvsGAKxep859kKcU_KOiirofJzJcmpWbqfFMkb2-kBVeXC4fL5RByy9mCMyMf-ELVUjCtzsiMs7IsJOfVOZkxxmRhas0vyRXidqpaSDkjH-vkBmwhFW0CoDgOuQPskcaWdv2m2400pgAJAn0BOrgh_vQJqEvJjRM00M3OIVI8NJiTy4DX5KJ1O4SbU87J5_PTevlarN5f3paPq8IryXIhysZpqEEKD5UK3ivFa2GkUaZlugnMeC1rXXLdMuUCE6Xzpm54WQdZ6RDknNwddyPm3qLvM_jOx2EAn60QqhK81P_UPsXvA2C223hIw3TMCi4Uq00p1ETdHymfImKC1u5T_-XSaDmzf1ottyet8hez2mhw</recordid><startdate>20150928</startdate><enddate>20150928</enddate><creator>Nakata, M.</creator><creator>Toko, K.</creator><creator>Jevasuwan, W.</creator><creator>Fukata, N.</creator><creator>Saitoh, N.</creator><creator>Yoshizawa, N.</creator><creator>Suemasu, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150928</creationdate><title>Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates</title><author>Nakata, M. ; Toko, K. ; Jevasuwan, W. ; Fukata, N. ; Saitoh, N. ; Yoshizawa, N. ; Suemasu, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-27ba5e9e32ce84dcc4419263646f05bd06c5395715f04ad027ac69b179d385dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Arrays</topic><topic>Chemical synthesis</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>CRYSTALLIZATION</topic><topic>CRYSTALS</topic><topic>DENSITY</topic><topic>DISLOCATIONS</topic><topic>Germanium</topic><topic>GLASS</topic><topic>Glass substrates</topic><topic>Insulators</topic><topic>Morphology</topic><topic>Nanotechnology devices</topic><topic>NANOWIRES</topic><topic>Organic chemistry</topic><topic>STACKING FAULTS</topic><topic>SUBSTRATES</topic><topic>SYNTHESIS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>VAPORS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakata, M.</creatorcontrib><creatorcontrib>Toko, K.</creatorcontrib><creatorcontrib>Jevasuwan, W.</creatorcontrib><creatorcontrib>Fukata, N.</creatorcontrib><creatorcontrib>Saitoh, N.</creatorcontrib><creatorcontrib>Yoshizawa, N.</creatorcontrib><creatorcontrib>Suemasu, T.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakata, M.</au><au>Toko, K.</au><au>Jevasuwan, W.</au><au>Fukata, N.</au><au>Saitoh, N.</au><au>Yoshizawa, N.</au><au>Suemasu, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates</atitle><jtitle>Applied physics letters</jtitle><date>2015-09-28</date><risdate>2015</risdate><volume>107</volume><issue>13</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4932054</doi><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Arrays Chemical synthesis CHEMICAL VAPOR DEPOSITION CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CRYSTALLIZATION CRYSTALS DENSITY DISLOCATIONS Germanium GLASS Glass substrates Insulators Morphology Nanotechnology devices NANOWIRES Organic chemistry STACKING FAULTS SUBSTRATES SYNTHESIS TRANSMISSION ELECTRON MICROSCOPY VAPORS |
| title | Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T12%3A40%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Transfer-free%20synthesis%20of%20highly%20ordered%20Ge%20nanowire%20arrays%20on%20glass%20substrates&rft.jtitle=Applied%20physics%20letters&rft.au=Nakata,%20M.&rft.date=2015-09-28&rft.volume=107&rft.issue=13&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4932054&rft_dat=%3Cproquest_osti_%3E2124096724%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124096724&rft_id=info:pmid/&rfr_iscdi=true |