Type I band alignment in GaAs{sub 81}Sb{sub 19}/GaAs core-shell nanowires

The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs{sub 81}Sb{sub 19}/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functiona...

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Veröffentlicht in:Applied physics letters 2015-09, Vol.107 (11)
Hauptverfasser: Xu, T., Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072, Wei, M. J., Capiod, P., Díaz Álvarez, A., Han, X. L., Troadec, D., Nys, J. P., Berthe, M., Lefebvre, I., Grandidier, B., Patriarche, G., Plissard, S. R., CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes, Caroff, P., Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200
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