High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2015-09, Vol.33 (5)
Hauptverfasser:	McSkimming, Brian M., Chaix, Catherine, Speck, James S.
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY DECOMPOSITION GALLIUM NITRIDES ION MICROPROBE ANALYSIS MASS SPECTROSCOPY MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NITROGEN PLASMA RADIOWAVE RADIATION ROUGHNESS STOICHIOMETRY SUBSTRATES
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