Temperature dependences of the contact resistivity in ohmic contacts to n+-InN

The temperature dependences of the contact resistivity (ρ c ) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10 18 cm −3 in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ c ( T ) are obtained. The dep...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2015-04, Vol.49 (4), p.461-471
Hauptverfasser:	Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Brunkov, P. N., Jmerik, V. N., Ivanov, S. V., Kapitanchuk, L. M., Konakova, R. V., Klad’ko, V. P., Romanets, P. N., Saja, P. O., Safryuk, N. V., Sheremet, V. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	DENSITY EDGE DISLOCATIONS ELECTRIC CONDUCTIVITY FASTENERS GOLD INDIUM NITRIDES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE NITROGEN IONS PALLADIUM Physics Physics and Astronomy Quantum Phenomena SCREW DISLOCATIONS Semiconductor Structures TEMPERATURE DEPENDENCE TITANIUM X-RAY DIFFRACTION
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