Temperature dependences of the contact resistivity in ohmic contacts to n+-InN
The temperature dependences of the contact resistivity (ρ c ) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10 18 cm −3 in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ c ( T ) are obtained. The dep...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-04, Vol.49 (4), p.461-471 |
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| creator | Sachenko, A. V. Belyaev, A. E. Boltovets, N. S. Brunkov, P. N. Jmerik, V. N. Ivanov, S. V. Kapitanchuk, L. M. Konakova, R. V. Klad’ko, V. P. Romanets, P. N. Saja, P. O. Safryuk, N. V. Sheremet, V. N. |
| description | The temperature dependences of the contact resistivity (ρ
c
) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10
18
cm
−3
in the temperature range of 4.2–300 K. At temperatures
T
> 150 K, linearly increasing dependences ρ
c
(
T
) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10
9
cm
−2
. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10
10
cm
−2
. |
| doi_str_mv | 10.1134/S1063782615040193 |
| format | Article |
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c
) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10
18
cm
−3
in the temperature range of 4.2–300 K. At temperatures
T
> 150 K, linearly increasing dependences ρ
c
(
T
) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10
9
cm
−2
. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10
10
cm
−2
.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782615040193</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>DENSITY ; EDGE DISLOCATIONS ; ELECTRIC CONDUCTIVITY ; FASTENERS ; GOLD ; INDIUM NITRIDES ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; NITROGEN IONS ; PALLADIUM ; Physics ; Physics and Astronomy ; Quantum Phenomena ; SCREW DISLOCATIONS ; Semiconductor Structures ; TEMPERATURE DEPENDENCE ; TITANIUM ; X-RAY DIFFRACTION</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2015-04, Vol.49 (4), p.461-471</ispartof><rights>Pleiades Publishing, Ltd. 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-f12e0e3defd5cb7e7df058a22d29ae029b56a42c06de9df4dca99b748cad51bb3</citedby><cites>FETCH-LOGICAL-c316t-f12e0e3defd5cb7e7df058a22d29ae029b56a42c06de9df4dca99b748cad51bb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782615040193$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782615040193$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22469985$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sachenko, A. V.</creatorcontrib><creatorcontrib>Belyaev, A. E.</creatorcontrib><creatorcontrib>Boltovets, N. S.</creatorcontrib><creatorcontrib>Brunkov, P. N.</creatorcontrib><creatorcontrib>Jmerik, V. N.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><creatorcontrib>Kapitanchuk, L. M.</creatorcontrib><creatorcontrib>Konakova, R. V.</creatorcontrib><creatorcontrib>Klad’ko, V. P.</creatorcontrib><creatorcontrib>Romanets, P. N.</creatorcontrib><creatorcontrib>Saja, P. O.</creatorcontrib><creatorcontrib>Safryuk, N. V.</creatorcontrib><creatorcontrib>Sheremet, V. N.</creatorcontrib><title>Temperature dependences of the contact resistivity in ohmic contacts to n+-InN</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The temperature dependences of the contact resistivity (ρ
c
) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10
18
cm
−3
in the temperature range of 4.2–300 K. At temperatures
T
> 150 K, linearly increasing dependences ρ
c
(
T
) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10
9
cm
−2
. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10
10
cm
−2
.</description><subject>DENSITY</subject><subject>EDGE DISLOCATIONS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>FASTENERS</subject><subject>GOLD</subject><subject>INDIUM NITRIDES</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>NITROGEN IONS</subject><subject>PALLADIUM</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>SCREW DISLOCATIONS</subject><subject>Semiconductor Structures</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TITANIUM</subject><subject>X-RAY DIFFRACTION</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsfwFvAo6xmkmx2c5Tin0KpB-t5ySYTu8XNliQV-u3dUj0Jnmbg_d7w5hFyDewOQMj7N2BKVDVXUDLJQIsTMgGmWaFkpU8PuxLFQT8nFyltGAOoSzkhyxX2W4wm7yJSh1sMDoPFRAdP8xqpHUI2NtOIqUu5--rynnaBDuu-s79ionmg4baYh-UlOfPmM-HVz5yS96fH1eylWLw-z2cPi8IKULnwwJGhcOhdadsKK-dZWRvOHdcGGddtqYzklimH2nnprNG6rWRtjSuhbcWU3BzvDmOoJtkuo12PcQLa3HAuldZ1OVJwpGwcUorom23sehP3DbDmUFvzp7bRw4-eNLLhA2OzGXYxjM_8Y_oGrpxv2g</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Sachenko, A. V.</creator><creator>Belyaev, A. E.</creator><creator>Boltovets, N. S.</creator><creator>Brunkov, P. N.</creator><creator>Jmerik, V. N.</creator><creator>Ivanov, S. V.</creator><creator>Kapitanchuk, L. M.</creator><creator>Konakova, R. V.</creator><creator>Klad’ko, V. P.</creator><creator>Romanets, P. N.</creator><creator>Saja, P. O.</creator><creator>Safryuk, N. V.</creator><creator>Sheremet, V. N.</creator><general>Pleiades Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20150401</creationdate><title>Temperature dependences of the contact resistivity in ohmic contacts to n+-InN</title><author>Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S. ; Brunkov, P. N. ; Jmerik, V. N. ; Ivanov, S. V. ; Kapitanchuk, L. M. ; Konakova, R. V. ; Klad’ko, V. P. ; Romanets, P. N. ; Saja, P. O. ; Safryuk, N. V. ; Sheremet, V. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-f12e0e3defd5cb7e7df058a22d29ae029b56a42c06de9df4dca99b748cad51bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>DENSITY</topic><topic>EDGE DISLOCATIONS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>FASTENERS</topic><topic>GOLD</topic><topic>INDIUM NITRIDES</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>NITROGEN IONS</topic><topic>PALLADIUM</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Phenomena</topic><topic>SCREW DISLOCATIONS</topic><topic>Semiconductor Structures</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TITANIUM</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sachenko, A. V.</creatorcontrib><creatorcontrib>Belyaev, A. E.</creatorcontrib><creatorcontrib>Boltovets, N. S.</creatorcontrib><creatorcontrib>Brunkov, P. N.</creatorcontrib><creatorcontrib>Jmerik, V. N.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><creatorcontrib>Kapitanchuk, L. M.</creatorcontrib><creatorcontrib>Konakova, R. V.</creatorcontrib><creatorcontrib>Klad’ko, V. P.</creatorcontrib><creatorcontrib>Romanets, P. N.</creatorcontrib><creatorcontrib>Saja, P. O.</creatorcontrib><creatorcontrib>Safryuk, N. V.</creatorcontrib><creatorcontrib>Sheremet, V. N.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sachenko, A. V.</au><au>Belyaev, A. E.</au><au>Boltovets, N. S.</au><au>Brunkov, P. N.</au><au>Jmerik, V. N.</au><au>Ivanov, S. V.</au><au>Kapitanchuk, L. M.</au><au>Konakova, R. V.</au><au>Klad’ko, V. P.</au><au>Romanets, P. N.</au><au>Saja, P. O.</au><au>Safryuk, N. V.</au><au>Sheremet, V. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependences of the contact resistivity in ohmic contacts to n+-InN</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2015-04-01</date><risdate>2015</risdate><volume>49</volume><issue>4</issue><spage>461</spage><epage>471</epage><pages>461-471</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The temperature dependences of the contact resistivity (ρ
c
) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10
18
cm
−3
in the temperature range of 4.2–300 K. At temperatures
T
> 150 K, linearly increasing dependences ρ
c
(
T
) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10
9
cm
−2
. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10
10
cm
−2
.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782615040193</doi><tpages>11</tpages></addata></record> |
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| subjects | DENSITY EDGE DISLOCATIONS ELECTRIC CONDUCTIVITY FASTENERS GOLD INDIUM NITRIDES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE NITROGEN IONS PALLADIUM Physics Physics and Astronomy Quantum Phenomena SCREW DISLOCATIONS Semiconductor Structures TEMPERATURE DEPENDENCE TITANIUM X-RAY DIFFRACTION |
| title | Temperature dependences of the contact resistivity in ohmic contacts to n+-InN |
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