On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects

A variation in the tensoresistance of n -Ge:Sb and n -Si:As crystals as a result of irradiation with γ-ray photons ( 60 Co source) at fixed temperatures under conditions of the application of uniaxial elastic stress (0 ≤ X ≤ 1.2 GPa) along the main crystallographic direction is studied. It is found...

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