Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory
The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10 20 cm –3 . The microcathodoluminescence sp...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-09, Vol.49 (9), p.1134-1139 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 49 |
| creator | Morozova, N. K. Galstyan, V. G. Volkov, A. O. Mashchenko, V. E. |
| description | The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10
20
cm
–3
. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported. |
| doi_str_mv | 10.1134/S1063782615090225 |
| format | Article |
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20
cm
–3
. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782615090225</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>A CENTERS ; ALLOY SYSTEMS ; Alloys ; Analysis ; ANNEALING ; CADMIUM SULFIDES ; CONCENTRATION RATIO ; CRYSTALS ; DOPED MATERIALS ; Electronic Properties of Semiconductors ; EMISSION SPECTRA ; EMISSION SPECTROSCOPY ; ION IMPLANTATION ; LAYERS ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; OPTICAL PROPERTIES ; Physics ; Physics and Astronomy ; SCANNING ELECTRON MICROSCOPY ; Selenium ; SELENIUM IONS ; Zinc oxide ; ZINC OXIDES ; ZINC SELENIDES ; ZINC SULFIDES</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2015-09, Vol.49 (9), p.1134-1139</ispartof><rights>Pleiades Publishing, Ltd. 2015</rights><rights>COPYRIGHT 2015 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-a38e79dc30577dd71f586bba47f064aa0bd4df4e3a9978302e12e2c6e315762c3</citedby><cites>FETCH-LOGICAL-c383t-a38e79dc30577dd71f586bba47f064aa0bd4df4e3a9978302e12e2c6e315762c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782615090225$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782615090225$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22469806$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Morozova, N. K.</creatorcontrib><creatorcontrib>Galstyan, V. G.</creatorcontrib><creatorcontrib>Volkov, A. O.</creatorcontrib><creatorcontrib>Mashchenko, V. E.</creatorcontrib><title>Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10
20
cm
–3
. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.</description><subject>A CENTERS</subject><subject>ALLOY SYSTEMS</subject><subject>Alloys</subject><subject>Analysis</subject><subject>ANNEALING</subject><subject>CADMIUM SULFIDES</subject><subject>CONCENTRATION RATIO</subject><subject>CRYSTALS</subject><subject>DOPED MATERIALS</subject><subject>Electronic Properties of Semiconductors</subject><subject>EMISSION SPECTRA</subject><subject>EMISSION SPECTROSCOPY</subject><subject>ION IMPLANTATION</subject><subject>LAYERS</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>OPTICAL PROPERTIES</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>Selenium</subject><subject>SELENIUM IONS</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><subject>ZINC SELENIDES</subject><subject>ZINC SULFIDES</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kctKAzEUhgdRsFYfwF3AjS5Gc5tkZlnEGwhdVBe6CWlypkbapCQR7NubsSKIIlnkcM73_5xLVR0TfE4I4xczggWTLRWkwR2mtNmpRqREteCy2x1iweqhvl8dpPSKMSFtw0fV03SdndFLtI5hDTE7SCj0yAVf25Kw6NlPT2dwhpZ6AzEh51F-AWSCz_CeB3SuvUXaF5cYUnJ-MQAhbg6rvV4vExx9_ePq8frq4fK2vp_e3F1O7mvDWpZrzVqQnTUMN1JaK0nftGI-11z2WHCt8dxy23NguutkyzAFQoEaAYw0UlDDxtXJ1jek7FQyLoN5Kf15MFlRykXXltm_qYVegnK-Dzlqs3LJqAlvKG4o4QN1_gdVnoWVK57Qu5L_ISBbwefwEXq1jm6l40YRrIbDqF-HKRq61aTC-gVE9Rreoi87-kf0AXpDjVQ</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>Morozova, N. K.</creator><creator>Galstyan, V. G.</creator><creator>Volkov, A. O.</creator><creator>Mashchenko, V. E.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20150901</creationdate><title>Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory</title><author>Morozova, N. K. ; Galstyan, V. G. ; Volkov, A. O. ; Mashchenko, V. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-a38e79dc30577dd71f586bba47f064aa0bd4df4e3a9978302e12e2c6e315762c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>A CENTERS</topic><topic>ALLOY SYSTEMS</topic><topic>Alloys</topic><topic>Analysis</topic><topic>ANNEALING</topic><topic>CADMIUM SULFIDES</topic><topic>CONCENTRATION RATIO</topic><topic>CRYSTALS</topic><topic>DOPED MATERIALS</topic><topic>Electronic Properties of Semiconductors</topic><topic>EMISSION SPECTRA</topic><topic>EMISSION SPECTROSCOPY</topic><topic>ION IMPLANTATION</topic><topic>LAYERS</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>OPTICAL PROPERTIES</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>Selenium</topic><topic>SELENIUM IONS</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><topic>ZINC SELENIDES</topic><topic>ZINC SULFIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Morozova, N. K.</creatorcontrib><creatorcontrib>Galstyan, V. G.</creatorcontrib><creatorcontrib>Volkov, A. O.</creatorcontrib><creatorcontrib>Mashchenko, V. E.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Morozova, N. K.</au><au>Galstyan, V. G.</au><au>Volkov, A. O.</au><au>Mashchenko, V. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2015-09-01</date><risdate>2015</risdate><volume>49</volume><issue>9</issue><spage>1134</spage><epage>1139</epage><pages>1134-1139</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10
20
cm
–3
. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782615090225</doi><tpages>6</tpages></addata></record> |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | A CENTERS ALLOY SYSTEMS Alloys Analysis ANNEALING CADMIUM SULFIDES CONCENTRATION RATIO CRYSTALS DOPED MATERIALS Electronic Properties of Semiconductors EMISSION SPECTRA EMISSION SPECTROSCOPY ION IMPLANTATION LAYERS Magnetic Materials Magnetism MATERIALS SCIENCE OPTICAL PROPERTIES Physics Physics and Astronomy SCANNING ELECTRON MICROSCOPY Selenium SELENIUM IONS Zinc oxide ZINC OXIDES ZINC SELENIDES ZINC SULFIDES |
| title | Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory |
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