Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions
Low-temperature photoluminescence in n -Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, an...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-12, Vol.49 (12), p.1651-1654 |
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| container_issue | 12 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 49 |
| creator | Sobolev, N. A. Shtel’makh, K. F. Kalyadin, A. E. Shek, E. I. |
| description | Low-temperature photoluminescence in
n
-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called
X
and
W
centers formed from self-interstitial silicon atoms,
H
and
P
centers containing oxygen atoms, and Er centers containing Er
3+
ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for
X
and
H
centers. In the case of
P
and Er centers, the values of the energies practically coincide with previously published data. For
W
centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers. |
| doi_str_mv | 10.1134/S1063782615120209 |
| format | Article |
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n
-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called
X
and
W
centers formed from self-interstitial silicon atoms,
H
and
P
centers containing oxygen atoms, and Er centers containing Er
3+
ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for
X
and
H
centers. In the case of
P
and Er centers, the values of the energies practically coincide with previously published data. For
W
centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782615120209</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>EMISSION SPECTRA ; ERBIUM ; ERBIUM IONS ; H CENTERS ; Interaction with Radiation ; ION IMPLANTATION ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; N-TYPE CONDUCTORS ; OXYGEN ; OXYGEN IONS ; PHOTOLUMINESCENCE ; Physics ; Physics and Astronomy ; QUENCHING ; SILICON ; Spectroscopy ; TEMPERATURE DEPENDENCE</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1651-1654</ispartof><rights>Pleiades Publishing, Ltd. 2015</rights><rights>COPYRIGHT 2015 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-312e469c769e07e53e033505d42b259ee37e4cea30659b1b5ef012ea2f9d36073</citedby><cites>FETCH-LOGICAL-c355t-312e469c769e07e53e033505d42b259ee37e4cea30659b1b5ef012ea2f9d36073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782615120209$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782615120209$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22469670$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sobolev, N. A.</creatorcontrib><creatorcontrib>Shtel’makh, K. F.</creatorcontrib><creatorcontrib>Kalyadin, A. E.</creatorcontrib><creatorcontrib>Shek, E. I.</creatorcontrib><title>Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Low-temperature photoluminescence in
n
-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called
X
and
W
centers formed from self-interstitial silicon atoms,
H
and
P
centers containing oxygen atoms, and Er centers containing Er
3+
ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for
X
and
H
centers. In the case of
P
and Er centers, the values of the energies practically coincide with previously published data. For
W
centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.</description><subject>EMISSION SPECTRA</subject><subject>ERBIUM</subject><subject>ERBIUM IONS</subject><subject>H CENTERS</subject><subject>Interaction with Radiation</subject><subject>ION IMPLANTATION</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>N-TYPE CONDUCTORS</subject><subject>OXYGEN</subject><subject>OXYGEN IONS</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>QUENCHING</subject><subject>SILICON</subject><subject>Spectroscopy</subject><subject>TEMPERATURE DEPENDENCE</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kU1LAzEQhhdRsFZ_gLeA59V8b3MsxS8oeLCelzQ726bsJkuSYvvvzbLeBMkh4Z3nGTJMUdwT_EgI40-fBEtWLagkglBMsbooZgQrXEpeqcvxLVk51q-LmxgPGBOyEHxWnDbQDxB0OgZADQzgGnAGIvItSntAw94n3x176yCasYKsS-CiTXaCcpggxByjaDtrvEO2Hzqd0wZ927RHELb22CPtGuRP5x1kwLt4W1y1uotw93vPi6-X583qrVx_vL6vluvSMCFSyQgFLpWppAJcgWCAGRNYNJxuqVAArAJuQDMshdqSrYAWZ0XTVjVM4orNi4epr4_J1tHYBGaff-nApJrS3FtWOFOPE7XTHdTWtT4FbfJpoB9ngtbmfMk5XxBFGckCmQQTfIwB2noIttfhXBNcjxup_2wkO3RyYmbdDkJ98Mfg8vT_SD-bHY6O</recordid><startdate>20151201</startdate><enddate>20151201</enddate><creator>Sobolev, N. A.</creator><creator>Shtel’makh, K. F.</creator><creator>Kalyadin, A. E.</creator><creator>Shek, E. I.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20151201</creationdate><title>Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions</title><author>Sobolev, N. A. ; Shtel’makh, K. F. ; Kalyadin, A. E. ; Shek, E. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-312e469c769e07e53e033505d42b259ee37e4cea30659b1b5ef012ea2f9d36073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>EMISSION SPECTRA</topic><topic>ERBIUM</topic><topic>ERBIUM IONS</topic><topic>H CENTERS</topic><topic>Interaction with Radiation</topic><topic>ION IMPLANTATION</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>N-TYPE CONDUCTORS</topic><topic>OXYGEN</topic><topic>OXYGEN IONS</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>QUENCHING</topic><topic>SILICON</topic><topic>Spectroscopy</topic><topic>TEMPERATURE DEPENDENCE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sobolev, N. A.</creatorcontrib><creatorcontrib>Shtel’makh, K. F.</creatorcontrib><creatorcontrib>Kalyadin, A. E.</creatorcontrib><creatorcontrib>Shek, E. I.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sobolev, N. A.</au><au>Shtel’makh, K. F.</au><au>Kalyadin, A. E.</au><au>Shek, E. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2015-12-01</date><risdate>2015</risdate><volume>49</volume><issue>12</issue><spage>1651</spage><epage>1654</epage><pages>1651-1654</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Low-temperature photoluminescence in
n
-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called
X
and
W
centers formed from self-interstitial silicon atoms,
H
and
P
centers containing oxygen atoms, and Er centers containing Er
3+
ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for
X
and
H
centers. In the case of
P
and Er centers, the values of the energies practically coincide with previously published data. For
W
centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782615120209</doi><tpages>4</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1651-1654 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22469670 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | EMISSION SPECTRA ERBIUM ERBIUM IONS H CENTERS Interaction with Radiation ION IMPLANTATION Magnetic Materials Magnetism MATERIALS SCIENCE N-TYPE CONDUCTORS OXYGEN OXYGEN IONS PHOTOLUMINESCENCE Physics Physics and Astronomy QUENCHING SILICON Spectroscopy TEMPERATURE DEPENDENCE |
| title | Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions |
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