Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals
The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-01, Vol.50 (1), p.112-119 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Korsunska, N. E. Shulga, E. P. Stara, T. R. Litvin, P. M. Bondarenko, V. A. |
| description | The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity. |
| doi_str_mv | 10.1134/S1063782616010103 |
| format | Article |
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This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782616010103</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Barriers ; CAPACITANCE ; Capacitance-voltage characteristics ; CHANNELING ; CRYSTAL STRUCTURE ; Crystallography ; Diodes ; Drift ; ELECTRIC FIELDS ; ELECTRIC POTENTIAL ; Electric properties ; ELECTRODES ; ILLUMINANCE ; IRRADIATION ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; MONOCRYSTALS ; ORIENTATION ; PHOTODIODES ; PHOTOLYSIS ; PHOTOSENSITIVITY ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices ; SCHOTTKY BARRIER DIODES ; Single crystals ; SURFACES ; ULTRAVIOLET RADIATION ; Zinc sulfide ; ZINC SULFIDES</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2016-01, Vol.50 (1), p.112-119</ispartof><rights>Pleiades Publishing, Ltd. 2016</rights><rights>COPYRIGHT 2016 Springer</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c422t-e7bab748b84bc0e20d53c818db0ed133b1e9cafdd0526f9539ade1128bf8f6413</citedby><cites>FETCH-LOGICAL-c422t-e7bab748b84bc0e20d53c818db0ed133b1e9cafdd0526f9539ade1128bf8f6413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782616010103$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782616010103$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22469619$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Korsunska, N. E.</creatorcontrib><creatorcontrib>Shulga, E. P.</creatorcontrib><creatorcontrib>Stara, T. R.</creatorcontrib><creatorcontrib>Litvin, P. M.</creatorcontrib><creatorcontrib>Bondarenko, V. A.</creatorcontrib><title>Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.</description><subject>Barriers</subject><subject>CAPACITANCE</subject><subject>Capacitance-voltage characteristics</subject><subject>CHANNELING</subject><subject>CRYSTAL STRUCTURE</subject><subject>Crystallography</subject><subject>Diodes</subject><subject>Drift</subject><subject>ELECTRIC FIELDS</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electric properties</subject><subject>ELECTRODES</subject><subject>ILLUMINANCE</subject><subject>IRRADIATION</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>MONOCRYSTALS</subject><subject>ORIENTATION</subject><subject>PHOTODIODES</subject><subject>PHOTOLYSIS</subject><subject>PHOTOSENSITIVITY</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>Single crystals</subject><subject>SURFACES</subject><subject>ULTRAVIOLET RADIATION</subject><subject>Zinc sulfide</subject><subject>ZINC SULFIDES</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqNkc1rXCEQwB-lhaZp_oDcHvT8Ekd9Pj2G0C9I6GHbSy7ix7hruqtbNYf97-uyhRRKIcxhdPz9hpEZhksgVwCMX6-ACLZIKkAQ6MFeDWdAFJkEX9Tr41mw6fj-dnhX6yMhAHLmZ8PDPbqNSbHu6pjD2DY4elwX402LOR1LK7fJrf08TNaUErGM-37PPmaPdbSmoh87-JBWY41pvcXRlUNtZlvfD29CT3jxJ58PPz59_H77Zbr79vnr7c3d5DilbcLFGrtwaSW3jiAlfmZOgvSWoAfGLKByJnhPZiqCmpkyHgGotEEGwYGdDx9OfXNtUVcXW_-Syymha5pSLpQA9UztS_71hLXpx_xUUh9Mg5KELJywuVNXJ2pttqhjCrkV43p43MXeE0Ps9Zs-RKeJgpcKnHMJihLZBTgJruRaCwa9L3FnykED0cdV6n9W2R16cmpn0xrLX7P_V_oNuHKfBA</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Korsunska, N. 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E.</creatorcontrib><creatorcontrib>Shulga, E. P.</creatorcontrib><creatorcontrib>Stara, T. R.</creatorcontrib><creatorcontrib>Litvin, P. M.</creatorcontrib><creatorcontrib>Bondarenko, V. A.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Korsunska, N. E.</au><au>Shulga, E. P.</au><au>Stara, T. R.</au><au>Litvin, P. M.</au><au>Bondarenko, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2016-01-01</date><risdate>2016</risdate><volume>50</volume><issue>1</issue><spage>112</spage><epage>119</epage><pages>112-119</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782616010103</doi><tpages>8</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Barriers CAPACITANCE Capacitance-voltage characteristics CHANNELING CRYSTAL STRUCTURE Crystallography Diodes Drift ELECTRIC FIELDS ELECTRIC POTENTIAL Electric properties ELECTRODES ILLUMINANCE IRRADIATION Magnetic Materials Magnetism MATERIALS SCIENCE MONOCRYSTALS ORIENTATION PHOTODIODES PHOTOLYSIS PHOTOSENSITIVITY Physics Physics and Astronomy Physics of Semiconductor Devices SCHOTTKY BARRIER DIODES Single crystals SURFACES ULTRAVIOLET RADIATION Zinc sulfide ZINC SULFIDES |
| title | Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals |
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