Control of ferromagnetism in (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3} via F doping of electron carriers

Highlights: • F doping was achieved by a process of low temperature reaction with PVDF. • RTFM was obtained in the F-doped (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3.} • Magnetism and electric resistivity can be controlled by the content of doped F. • The FM can be ascribed to a long range exchange inte...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials research bulletin 2015-01, Vol.61
Hauptverfasser: Yan, Shiming, Ou, Haifeng, Zhang, Liying, He, Jie, Yu, Jingxin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!