Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode
Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should...
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| Veröffentlicht in: | Applied physics letters 2015-01, Vol.106 (4) |
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| container_issue | 4 |
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| container_title | Applied physics letters |
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| creator | Jung, Euihan Hwang, Gwangseok Chung, Jaehun Kwon, Ohmyoung Han, Jaecheon Moon, Yong-Tae Seong, Tae-Yeon |
| description | Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggests that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem. |
| doi_str_mv | 10.1063/1.4907177 |
| format | Article |
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In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggests that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4907177</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Augers ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CURRENT DENSITY ; Current leakage ; Diodes ; Efficiency ; GALLIUM NITRIDES ; LAYERS ; LEAKAGE CURRENT ; LIGHT EMITTING DIODES ; MICROSCOPY ; Multi Quantum Wells ; Organic light emitting diodes ; Performance degradation ; Photodegradation ; Power efficiency ; QUANTUM EFFICIENCY ; QUANTUM WELLS ; RECOMBINATION ; Scanning thermal microscopy ; SPATIAL RESOLUTION ; TEMPERATURE DISTRIBUTION</subject><ispartof>Applied physics letters, 2015-01, Vol.106 (4)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-e3f36d30d6920fb4f0fc0f92f9b0ccbce64602fbd253a2858b4c572ac3785c763</citedby><cites>FETCH-LOGICAL-c285t-e3f36d30d6920fb4f0fc0f92f9b0ccbce64602fbd253a2858b4c572ac3785c763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22415175$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Jung, Euihan</creatorcontrib><creatorcontrib>Hwang, Gwangseok</creatorcontrib><creatorcontrib>Chung, Jaehun</creatorcontrib><creatorcontrib>Kwon, Ohmyoung</creatorcontrib><creatorcontrib>Han, Jaecheon</creatorcontrib><creatorcontrib>Moon, Yong-Tae</creatorcontrib><creatorcontrib>Seong, Tae-Yeon</creatorcontrib><title>Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode</title><title>Applied physics letters</title><description>Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggests that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.</description><subject>Applied physics</subject><subject>Augers</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CURRENT DENSITY</subject><subject>Current leakage</subject><subject>Diodes</subject><subject>Efficiency</subject><subject>GALLIUM NITRIDES</subject><subject>LAYERS</subject><subject>LEAKAGE CURRENT</subject><subject>LIGHT EMITTING DIODES</subject><subject>MICROSCOPY</subject><subject>Multi Quantum Wells</subject><subject>Organic light emitting diodes</subject><subject>Performance degradation</subject><subject>Photodegradation</subject><subject>Power efficiency</subject><subject>QUANTUM EFFICIENCY</subject><subject>QUANTUM WELLS</subject><subject>RECOMBINATION</subject><subject>Scanning thermal microscopy</subject><subject>SPATIAL RESOLUTION</subject><subject>TEMPERATURE DISTRIBUTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFUctOwzAQtBBIlMKBP7DEiUOKH3GcHFHFo1IlLnC2HMdOXSV26jig_gMfTRKKOK1mNTPa2QHgFqMVRhl9wKu0QBxzfgYWGHGeUIzzc7BACNEkKxi-BFd9vx8hI5QuwPfGfeo-2lpG62oYdxr6YGvroDdQG2OV1U4dYRW872B5hF3wxjZ_3KjbTgcZh6ChVMH3_bxuhyba5DBIF4cWfummmezkaDqzJ3Vj611MdGvjDCvrK30NLoxsen1zmkvw8fz0vn5Ntm8vm_XjNlEkZ6OIGppVFFVZQZApU4OMQqYgpiiRUqXSWZohYsqKMCpHRV6minEiFeU5UzyjS3D36-vH5KJXNmq1U945raIgJMUMc_bPGiMfhvFJYu-H4MbDBMEkLWjK8OR1_8ua0wdtRBdsK8NRYCSmSgQWp0roD5J7gBQ</recordid><startdate>20150126</startdate><enddate>20150126</enddate><creator>Jung, Euihan</creator><creator>Hwang, Gwangseok</creator><creator>Chung, Jaehun</creator><creator>Kwon, Ohmyoung</creator><creator>Han, Jaecheon</creator><creator>Moon, Yong-Tae</creator><creator>Seong, Tae-Yeon</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150126</creationdate><title>Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode</title><author>Jung, Euihan ; Hwang, Gwangseok ; Chung, Jaehun ; Kwon, Ohmyoung ; Han, Jaecheon ; Moon, Yong-Tae ; Seong, Tae-Yeon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-e3f36d30d6920fb4f0fc0f92f9b0ccbce64602fbd253a2858b4c572ac3785c763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Augers</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CURRENT DENSITY</topic><topic>Current leakage</topic><topic>Diodes</topic><topic>Efficiency</topic><topic>GALLIUM NITRIDES</topic><topic>LAYERS</topic><topic>LEAKAGE CURRENT</topic><topic>LIGHT EMITTING DIODES</topic><topic>MICROSCOPY</topic><topic>Multi Quantum Wells</topic><topic>Organic light emitting diodes</topic><topic>Performance degradation</topic><topic>Photodegradation</topic><topic>Power efficiency</topic><topic>QUANTUM EFFICIENCY</topic><topic>QUANTUM WELLS</topic><topic>RECOMBINATION</topic><topic>Scanning thermal microscopy</topic><topic>SPATIAL RESOLUTION</topic><topic>TEMPERATURE DISTRIBUTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jung, Euihan</creatorcontrib><creatorcontrib>Hwang, Gwangseok</creatorcontrib><creatorcontrib>Chung, Jaehun</creatorcontrib><creatorcontrib>Kwon, Ohmyoung</creatorcontrib><creatorcontrib>Han, Jaecheon</creatorcontrib><creatorcontrib>Moon, Yong-Tae</creatorcontrib><creatorcontrib>Seong, Tae-Yeon</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jung, Euihan</au><au>Hwang, Gwangseok</au><au>Chung, Jaehun</au><au>Kwon, Ohmyoung</au><au>Han, Jaecheon</au><au>Moon, Yong-Tae</au><au>Seong, Tae-Yeon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode</atitle><jtitle>Applied physics letters</jtitle><date>2015-01-26</date><risdate>2015</risdate><volume>106</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggests that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4907177</doi></addata></record> |
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| ispartof | Applied physics letters, 2015-01, Vol.106 (4) |
| issn | 0003-6951 1077-3118 |
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| source | Alma/SFX Local Collection; AIP Journals (American Institute of Physics) |
| subjects | Applied physics Augers CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENT DENSITY Current leakage Diodes Efficiency GALLIUM NITRIDES LAYERS LEAKAGE CURRENT LIGHT EMITTING DIODES MICROSCOPY Multi Quantum Wells Organic light emitting diodes Performance degradation Photodegradation Power efficiency QUANTUM EFFICIENCY QUANTUM WELLS RECOMBINATION Scanning thermal microscopy SPATIAL RESOLUTION TEMPERATURE DISTRIBUTION |
| title | Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode |
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