Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devi...

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Veröffentlicht in:	Applied physics letters 2015-02, Vol.106 (8)
Hauptverfasser:	Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X.
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY Aluminum gallium nitrides Applied physics Barriers CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL STRUCTURE Degradation ELECTRIC CONDUCTIVITY ELECTRIC FIELDS Electric potential ELECTRON MOBILITY ELECTRONS EV RANGE GALLIUM NITRIDES High electron mobility transistors Pulsed current Semiconductor devices SILICON STRESSES TRANSIENTS TRANSISTORS TRAPPING TRAPS TUNNEL EFFECT
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