Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constric...

Ausführliche Beschreibung