Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two e...

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Veröffentlicht in:Journal of applied physics 2015-05, Vol.117 (17)
Hauptverfasser: Kaiju, H., Kasa, H., Komine, T., Mori, S., Misawa, T., Abe, T., Nishii, J.
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container_issue 17
container_start_page
container_title Journal of applied physics
container_volume 117
creator Kaiju, H.
Kasa, H.
Komine, T.
Mori, S.
Misawa, T.
Abe, T.
Nishii, J.
description We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96–1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10–20 nm can be expected to function as spin-filter devices.
doi_str_mv 10.1063/1.4917061
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We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96–1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. 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We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96–1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. 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source AIP Journals Complete; Alma/SFX Local Collection
subjects BORATES
COBALT
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dependence
Devices
ELECTRIC CONTACTS
ELECTRODES
Film thickness
GLASS
HYSTERESIS
Hysteresis loops
MAGNETIC FIELDS
MAGNETIC PROPERTIES
Magnetism
Mathematical analysis
ROUGHNESS
SEMICONDUCTOR JUNCTIONS
SPIN
Surface roughness
SURFACES
THICKNESS
THIN FILMS
title Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields
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