Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N f...

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Veröffentlicht in:	Journal of applied physics 2014-12, Vol.116 (21)
Hauptverfasser:	Aho, A., Korpijärvi, V.-M., Tukiainen, A., Puustinen, J., Guina, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	ABUNDANCE ALLOYS Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Electron energy distribution ENERGY SPECTRA Epitaxial growth Flow resistance GALLIUM ARSENIDES MOLECULAR BEAM EPITAXY NITROGEN PLASMA Radio frequency Radio frequency plasma RADIOWAVE RADIATION
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