Si/Ge hetero-structure nanotube tunnel field effect transistor
We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in...
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| Veröffentlicht in: | Journal of applied physics 2015-01, Vol.117 (1) |
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| container_title | Journal of applied physics |
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| creator | Hanna, A. N. Hussain, M. M. |
| description | We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5 V. |
| doi_str_mv | 10.1063/1.4905423 |
| format | Article |
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N. ; Hussain, M. M.</creator><creatorcontrib>Hanna, A. N. ; Hussain, M. M.</creatorcontrib><description>We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5 V.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4905423</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Architecture ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; COMPARATIVE EVALUATIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Configuration management ; ELECTRIC CURRENTS ; FIELD EFFECT TRANSISTORS ; GERMANIUM ; HALL EFFECT ; HETEROJUNCTIONS ; NANOTUBES ; Nanowires ; RECOMBINATION ; Semiconductor devices ; SILICON ; Topology ; Transistors ; TUNNEL EFFECT</subject><ispartof>Journal of applied physics, 2015-01, Vol.117 (1)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-fd5be991be4fb0db2e5dc3b5a90f9118489040f2ba8cb517e116a76d52f9e2f93</citedby><cites>FETCH-LOGICAL-c361t-fd5be991be4fb0db2e5dc3b5a90f9118489040f2ba8cb517e116a76d52f9e2f93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22399219$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hanna, A. 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This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5 V.</description><subject>Applied physics</subject><subject>Architecture</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Configuration management</subject><subject>ELECTRIC CURRENTS</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GERMANIUM</subject><subject>HALL EFFECT</subject><subject>HETEROJUNCTIONS</subject><subject>NANOTUBES</subject><subject>Nanowires</subject><subject>RECOMBINATION</subject><subject>Semiconductor devices</subject><subject>SILICON</subject><subject>Topology</subject><subject>Transistors</subject><subject>TUNNEL EFFECT</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkE1LAzEURYMoWKsL_8GAKxfTvpePmclGkKJVKLhQ12GSeaFT6qQmmYX_3pF24eJyN4fL4TJ2i7BAqMQSF1KDklycsRlCo8taKThnMwCOZaNrfcmuUtoBIDZCz9jDe79cU7GlTDGUKcfR5TFSMbRDyKOlIo_DQPvC97TvCvKeXC5ybIfUpxziNbvw7T7Rzann7PP56WP1Um7e1q-rx03pRIW59J2ypDVakt5CZzmpzgmrWg1eTyay0SDBc9s2ziqsCbFq66pT3GuaIubs7rgbUu5Ncn0mt3VhUnPZcC605viPOsTwPVLKZhfGOExihiOXWvIacKLuj5SLIaVI3hxi_9XGH4Ng_k40aE4nil_oRGLB</recordid><startdate>20150107</startdate><enddate>20150107</enddate><creator>Hanna, A. 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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2015-01, Vol.117 (1) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Architecture CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COMPARATIVE EVALUATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Configuration management ELECTRIC CURRENTS FIELD EFFECT TRANSISTORS GERMANIUM HALL EFFECT HETEROJUNCTIONS NANOTUBES Nanowires RECOMBINATION Semiconductor devices SILICON Topology Transistors TUNNEL EFFECT |
| title | Si/Ge hetero-structure nanotube tunnel field effect transistor |
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