Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer
We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide b...
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| Veröffentlicht in: | Applied physics letters 2015-01, Vol.106 (2) |
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| container_title | Applied physics letters |
| container_volume | 106 |
| creator | Son, Seokki Choi, Moonseok Kim, Dohyung Choi, Changhwan Yu, Sunmoon |
| description | We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact. |
| doi_str_mv | 10.1063/1.4905634 |
| format | Article |
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We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4905634</identifier><language>eng</language><publisher>United States</publisher><subject>ALUMINIUM OXIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; INTERFACES ; LAYERS ; MOLYBDENUM SULFIDES ; NUCLEATION ; PRECURSOR ; SURFACES ; TEMPERATURE DEPENDENCE</subject><ispartof>Applied physics letters, 2015-01, Vol.106 (2)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22399089$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Son, Seokki</creatorcontrib><creatorcontrib>Choi, Moonseok</creatorcontrib><creatorcontrib>Kim, Dohyung</creatorcontrib><creatorcontrib>Choi, Changhwan</creatorcontrib><creatorcontrib>Yu, Sunmoon</creatorcontrib><title>Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer</title><title>Applied physics letters</title><description>We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.</description><subject>ALUMINIUM OXIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>MOLYBDENUM SULFIDES</subject><subject>NUCLEATION</subject><subject>PRECURSOR</subject><subject>SURFACES</subject><subject>TEMPERATURE DEPENDENCE</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqNikFrwjAYhoM4sNMd9g8-2Lma9LPVHMfY2A7Dg94lrV_bjDSRJB2T4X-3iD_A0_O8Dy9jz4LPBS9wIeZLyfMClyOWCL5apSjEeswSzjmmhczFhD2G8DPMPENMmPnqjt790gFa3bQQqTuSV7H3BNpGagbXzoKr4dX8h76E7Ly5Es8w9G-3vVUoT9AHbRtQ0FFUBtyfPhCUfV2TB6NO5GfsoVYm0NONU_by8b57-0xdiHofKh2paitnLVVxn2UoJV9LvO91Ad8eTeo</recordid><startdate>20150112</startdate><enddate>20150112</enddate><creator>Son, Seokki</creator><creator>Choi, Moonseok</creator><creator>Kim, Dohyung</creator><creator>Choi, Changhwan</creator><creator>Yu, Sunmoon</creator><scope>OTOTI</scope></search><sort><creationdate>20150112</creationdate><title>Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer</title><author>Son, Seokki ; Choi, Moonseok ; Kim, Dohyung ; Choi, Changhwan ; Yu, Sunmoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_223990893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ALUMINIUM OXIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>MOLYBDENUM SULFIDES</topic><topic>NUCLEATION</topic><topic>PRECURSOR</topic><topic>SURFACES</topic><topic>TEMPERATURE DEPENDENCE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Son, Seokki</creatorcontrib><creatorcontrib>Choi, Moonseok</creatorcontrib><creatorcontrib>Kim, Dohyung</creatorcontrib><creatorcontrib>Choi, Changhwan</creatorcontrib><creatorcontrib>Yu, Sunmoon</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Son, Seokki</au><au>Choi, Moonseok</au><au>Kim, Dohyung</au><au>Choi, Changhwan</au><au>Yu, Sunmoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer</atitle><jtitle>Applied physics letters</jtitle><date>2015-01-12</date><risdate>2015</risdate><volume>106</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.</abstract><cop>United States</cop><doi>10.1063/1.4905634</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2015-01, Vol.106 (2) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22399089 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ALUMINIUM OXIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY INTERFACES LAYERS MOLYBDENUM SULFIDES NUCLEATION PRECURSOR SURFACES TEMPERATURE DEPENDENCE |
| title | Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer |
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