Distinct photoresponse in graphene induced by laser irradiation
The graphene-based photodetector with tunable p-p+-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a re...
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| Veröffentlicht in: | Applied physics letters 2015-01, Vol.106 (2) |
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| container_title | Applied physics letters |
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| creator | Wang, Wen Hui Nan, Hai Yan Liu, Qi Liang, Zheng Yu, Zhi Hao Liu, Feng Yuan Hu, Wei Da Zhang, Wei Wang, Xin Ran Ni, Zhen Hua |
| description | The graphene-based photodetector with tunable p-p+-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices. |
| doi_str_mv | 10.1063/1.4906203 |
| format | Article |
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Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4906203</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CORRELATIONS ; ELECTRIC CONTACTS ; FABRICATION ; GRAPHENE ; IRRADIATION ; LASER RADIATION ; Lasers ; OPTOELECTRONIC DEVICES ; PHOTOCURRENTS ; Photoelectric effect ; Photoelectric emission ; PHOTOVOLTAIC EFFECT ; SEMICONDUCTOR JUNCTIONS ; THERMOELECTRIC CONVERSION</subject><ispartof>Applied physics letters, 2015-01, Vol.106 (2)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-b8d1205065d1e216778e54c507350f9ced4a8df9982e8dc222919fc1c75c6e353</citedby><cites>FETCH-LOGICAL-c351t-b8d1205065d1e216778e54c507350f9ced4a8df9982e8dc222919fc1c75c6e353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,782,786,887,27933,27934</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22399088$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Wen Hui</creatorcontrib><creatorcontrib>Nan, Hai Yan</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Liang, Zheng</creatorcontrib><creatorcontrib>Yu, Zhi Hao</creatorcontrib><creatorcontrib>Liu, Feng Yuan</creatorcontrib><creatorcontrib>Hu, Wei Da</creatorcontrib><creatorcontrib>Zhang, Wei</creatorcontrib><creatorcontrib>Wang, Xin Ran</creatorcontrib><creatorcontrib>Ni, Zhen Hua</creatorcontrib><title>Distinct photoresponse in graphene induced by laser irradiation</title><title>Applied physics letters</title><description>The graphene-based photodetector with tunable p-p+-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.</description><subject>Applied physics</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CORRELATIONS</subject><subject>ELECTRIC CONTACTS</subject><subject>FABRICATION</subject><subject>GRAPHENE</subject><subject>IRRADIATION</subject><subject>LASER RADIATION</subject><subject>Lasers</subject><subject>OPTOELECTRONIC DEVICES</subject><subject>PHOTOCURRENTS</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>PHOTOVOLTAIC EFFECT</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>THERMOELECTRIC CONVERSION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEYhIMoWKsH_8GCJw9b3zfZZJOTSK0fUPCi57BNsjalJmuSHvrv3dKCp5mBh2EYQm4RZgiCPeCsUSAosDMyQWjbmiHKczIBAFYLxfGSXOW8GSOnjE3I47PPxQdTqmEdS0wuDzFkV_lQfaduWLtw8HZnnK1W-2rbZZcqn1JnfVd8DNfkou-22d2cdEq-Xhaf87d6-fH6Pn9a1oZxLPVKWqTAQXCLjqJoW-l4Yzi0jEOvxvamk7ZXSlInraGUKlS9QdNyIxzjbErujr1xnKuz8cWZtYkhOFM0pUwpkPKfGlL83blc9CbuUhiHaYq0UUyAUCN1f6RMijkn1-sh-Z8u7TWCPryoUZ9eZH-0wGIj</recordid><startdate>20150112</startdate><enddate>20150112</enddate><creator>Wang, Wen Hui</creator><creator>Nan, Hai Yan</creator><creator>Liu, Qi</creator><creator>Liang, Zheng</creator><creator>Yu, Zhi Hao</creator><creator>Liu, Feng Yuan</creator><creator>Hu, Wei Da</creator><creator>Zhang, Wei</creator><creator>Wang, Xin Ran</creator><creator>Ni, Zhen Hua</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150112</creationdate><title>Distinct photoresponse in graphene induced by laser irradiation</title><author>Wang, Wen Hui ; Nan, Hai Yan ; Liu, Qi ; Liang, Zheng ; Yu, Zhi Hao ; Liu, Feng Yuan ; Hu, Wei Da ; Zhang, Wei ; Wang, Xin Ran ; Ni, Zhen Hua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-b8d1205065d1e216778e54c507350f9ced4a8df9982e8dc222919fc1c75c6e353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>CONCENTRATION RATIO</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CORRELATIONS</topic><topic>ELECTRIC CONTACTS</topic><topic>FABRICATION</topic><topic>GRAPHENE</topic><topic>IRRADIATION</topic><topic>LASER RADIATION</topic><topic>Lasers</topic><topic>OPTOELECTRONIC DEVICES</topic><topic>PHOTOCURRENTS</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>PHOTOVOLTAIC EFFECT</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>THERMOELECTRIC CONVERSION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Wen Hui</creatorcontrib><creatorcontrib>Nan, Hai Yan</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Liang, Zheng</creatorcontrib><creatorcontrib>Yu, Zhi Hao</creatorcontrib><creatorcontrib>Liu, Feng Yuan</creatorcontrib><creatorcontrib>Hu, Wei Da</creatorcontrib><creatorcontrib>Zhang, Wei</creatorcontrib><creatorcontrib>Wang, Xin Ran</creatorcontrib><creatorcontrib>Ni, Zhen Hua</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Wen Hui</au><au>Nan, Hai Yan</au><au>Liu, Qi</au><au>Liang, Zheng</au><au>Yu, Zhi Hao</au><au>Liu, Feng Yuan</au><au>Hu, Wei Da</au><au>Zhang, Wei</au><au>Wang, Xin Ran</au><au>Ni, Zhen Hua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Distinct photoresponse in graphene induced by laser irradiation</atitle><jtitle>Applied physics letters</jtitle><date>2015-01-12</date><risdate>2015</risdate><volume>106</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The graphene-based photodetector with tunable p-p+-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4906203</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CORRELATIONS ELECTRIC CONTACTS FABRICATION GRAPHENE IRRADIATION LASER RADIATION Lasers OPTOELECTRONIC DEVICES PHOTOCURRENTS Photoelectric effect Photoelectric emission PHOTOVOLTAIC EFFECT SEMICONDUCTOR JUNCTIONS THERMOELECTRIC CONVERSION |
| title | Distinct photoresponse in graphene induced by laser irradiation |
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