An electrically injected rolled-up semiconductor tube laser

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼...

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Veröffentlicht in:	Applied physics letters 2015-01, Vol.106 (2)
Hauptverfasser:	Dastjerdi, M. H. T., Djavid, M., Mi, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics GALLIUM ARSENIDES Gallium indium arsenide phosphide HETEROJUNCTIONS Heterostructures INDIUM ARSENIDES Indium gallium arsenides INDIUM PHOSPHIDES LASERS NANOSCIENCE AND NANOTECHNOLOGY PHOTON EMISSION QUANTUM WELLS SEMICONDUCTOR MATERIALS STRAINS SUBSTRATES Tube lasers TUBES Wall thickness WAVELENGTHS
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