Narrow-line self-assembled GaAs quantum dots for plasmonics
We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we iden...
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Veröffentlicht in: | Applied physics letters 2015-03, Vol.106 (10) |
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creator | Zhang, Hongyi Huo, Yongheng Lindfors, Klas Chen, Yonghai Schmidt, Oliver G. Rastelli, Armando Lippitz, Markus |
description | We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes. |
doi_str_mv | 10.1063/1.4914387 |
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fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22395694</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124851565</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-5d0e5f66a6144c76936e8382056a0f9af9e0e02b588139cb494a5374ca1dee303</originalsourceid><addsrcrecordid>eNpFkE1LAzEURYMoWKsL_8GAKxdT8_I1Ca5K0SoU3eg6pJk3OGU6afNmEP-9lRZcXS4cLpfD2C3wGXAjH2CmHChpqzM2AV5VpQSw52zCOZelcRou2RXR5lC1kHLCHt9Czum77NoeC8KuKQMRbtcd1sUyzKnYj6Efxm1Rp4GKJuVi1wXapr6NdM0umtAR3pxyyj6fnz4WL-Xqffm6mK_KKKweSl1z1I0xwYBSsTJOGrTSCq5N4I0LjUOOXKy1tSBdXCungpaVigFqRMnllN0ddxMNrafYDhi_Yup7jIMXQjptnPqndjntR6TBb9KY-8MxL0Aoq0EbfaDuj1TMiShj43e53Yb844H7P4Me_Mmg_AVWTWAi</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124851565</pqid></control><display><type>article</type><title>Narrow-line self-assembled GaAs quantum dots for plasmonics</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Zhang, Hongyi ; Huo, Yongheng ; Lindfors, Klas ; Chen, Yonghai ; Schmidt, Oliver G. ; Rastelli, Armando ; Lippitz, Markus</creator><creatorcontrib>Zhang, Hongyi ; Huo, Yongheng ; Lindfors, Klas ; Chen, Yonghai ; Schmidt, Oliver G. ; Rastelli, Armando ; Lippitz, Markus</creatorcontrib><description>We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4914387</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; COMPARATIVE EVALUATIONS ; Counterbalances ; COUPLING ; DIPOLES ; Emitters ; EXCITONS ; Far fields ; GALLIUM ARSENIDES ; GOLD ; INTERFACES ; NANOSCIENCE AND NANOTECHNOLOGY ; Optical properties ; PHOTOLUMINESCENCE ; PHOTONS ; Plasmonics ; PLASMONS ; Polaritons ; POLARONS ; QUANTUM DOTS ; REFRACTIVE INDEX ; Refractivity ; Self-assembly ; SEMICONDUCTOR MATERIALS ; SUBSTRATES ; SURFACES</subject><ispartof>Applied physics letters, 2015-03, Vol.106 (10)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-5d0e5f66a6144c76936e8382056a0f9af9e0e02b588139cb494a5374ca1dee303</citedby><cites>FETCH-LOGICAL-c285t-5d0e5f66a6144c76936e8382056a0f9af9e0e02b588139cb494a5374ca1dee303</cites><orcidid>0000-0002-0310-3078</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886,27926,27927</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22395694$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Hongyi</creatorcontrib><creatorcontrib>Huo, Yongheng</creatorcontrib><creatorcontrib>Lindfors, Klas</creatorcontrib><creatorcontrib>Chen, Yonghai</creatorcontrib><creatorcontrib>Schmidt, Oliver G.</creatorcontrib><creatorcontrib>Rastelli, Armando</creatorcontrib><creatorcontrib>Lippitz, Markus</creatorcontrib><title>Narrow-line self-assembled GaAs quantum dots for plasmonics</title><title>Applied physics letters</title><description>We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.</description><subject>Applied physics</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>Counterbalances</subject><subject>COUPLING</subject><subject>DIPOLES</subject><subject>Emitters</subject><subject>EXCITONS</subject><subject>Far fields</subject><subject>GALLIUM ARSENIDES</subject><subject>GOLD</subject><subject>INTERFACES</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>Optical properties</subject><subject>PHOTOLUMINESCENCE</subject><subject>PHOTONS</subject><subject>Plasmonics</subject><subject>PLASMONS</subject><subject>Polaritons</subject><subject>POLARONS</subject><subject>QUANTUM DOTS</subject><subject>REFRACTIVE INDEX</subject><subject>Refractivity</subject><subject>Self-assembly</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEURYMoWKsL_8GAKxdT8_I1Ca5K0SoU3eg6pJk3OGU6afNmEP-9lRZcXS4cLpfD2C3wGXAjH2CmHChpqzM2AV5VpQSw52zCOZelcRou2RXR5lC1kHLCHt9Czum77NoeC8KuKQMRbtcd1sUyzKnYj6Efxm1Rp4GKJuVi1wXapr6NdM0umtAR3pxyyj6fnz4WL-Xqffm6mK_KKKweSl1z1I0xwYBSsTJOGrTSCq5N4I0LjUOOXKy1tSBdXCungpaVigFqRMnllN0ddxMNrafYDhi_Yup7jIMXQjptnPqndjntR6TBb9KY-8MxL0Aoq0EbfaDuj1TMiShj43e53Yb844H7P4Me_Mmg_AVWTWAi</recordid><startdate>20150309</startdate><enddate>20150309</enddate><creator>Zhang, Hongyi</creator><creator>Huo, Yongheng</creator><creator>Lindfors, Klas</creator><creator>Chen, Yonghai</creator><creator>Schmidt, Oliver G.</creator><creator>Rastelli, Armando</creator><creator>Lippitz, Markus</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-0310-3078</orcidid></search><sort><creationdate>20150309</creationdate><title>Narrow-line self-assembled GaAs quantum dots for plasmonics</title><author>Zhang, Hongyi ; Huo, Yongheng ; Lindfors, Klas ; Chen, Yonghai ; Schmidt, Oliver G. ; Rastelli, Armando ; Lippitz, Markus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-5d0e5f66a6144c76936e8382056a0f9af9e0e02b588139cb494a5374ca1dee303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>Counterbalances</topic><topic>COUPLING</topic><topic>DIPOLES</topic><topic>Emitters</topic><topic>EXCITONS</topic><topic>Far fields</topic><topic>GALLIUM ARSENIDES</topic><topic>GOLD</topic><topic>INTERFACES</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>Optical properties</topic><topic>PHOTOLUMINESCENCE</topic><topic>PHOTONS</topic><topic>Plasmonics</topic><topic>PLASMONS</topic><topic>Polaritons</topic><topic>POLARONS</topic><topic>QUANTUM DOTS</topic><topic>REFRACTIVE INDEX</topic><topic>Refractivity</topic><topic>Self-assembly</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Hongyi</creatorcontrib><creatorcontrib>Huo, Yongheng</creatorcontrib><creatorcontrib>Lindfors, Klas</creatorcontrib><creatorcontrib>Chen, Yonghai</creatorcontrib><creatorcontrib>Schmidt, Oliver G.</creatorcontrib><creatorcontrib>Rastelli, Armando</creatorcontrib><creatorcontrib>Lippitz, Markus</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Hongyi</au><au>Huo, Yongheng</au><au>Lindfors, Klas</au><au>Chen, Yonghai</au><au>Schmidt, Oliver G.</au><au>Rastelli, Armando</au><au>Lippitz, Markus</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Narrow-line self-assembled GaAs quantum dots for plasmonics</atitle><jtitle>Applied physics letters</jtitle><date>2015-03-09</date><risdate>2015</risdate><volume>106</volume><issue>10</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4914387</doi><orcidid>https://orcid.org/0000-0002-0310-3078</orcidid></addata></record> |
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subjects | Applied physics COMPARATIVE EVALUATIONS Counterbalances COUPLING DIPOLES Emitters EXCITONS Far fields GALLIUM ARSENIDES GOLD INTERFACES NANOSCIENCE AND NANOTECHNOLOGY Optical properties PHOTOLUMINESCENCE PHOTONS Plasmonics PLASMONS Polaritons POLARONS QUANTUM DOTS REFRACTIVE INDEX Refractivity Self-assembly SEMICONDUCTOR MATERIALS SUBSTRATES SURFACES |
title | Narrow-line self-assembled GaAs quantum dots for plasmonics |
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