Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?
Recent experimental works have shown that Ge/Si core/shell nanowires (NWs) are very attractive for nanoelectronics and for low-temperature quantum devices, thanks to the confinement of holes in the Ge core. Reported hole mobilities of the order of 200 cm2/V/s are promising for high-performance field...
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| Veröffentlicht in: | Applied physics letters 2014-12, Vol.105 (23) |
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| container_title | Applied physics letters |
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| creator | Li, Jing Jomaa, Narjes Niquet, Yann-Michel Said, Moncef Delerue, Christophe |
| description | Recent experimental works have shown that Ge/Si core/shell nanowires (NWs) are very attractive for nanoelectronics and for low-temperature quantum devices, thanks to the confinement of holes in the Ge core. Reported hole mobilities of the order of 200 cm2/V/s are promising for high-performance field-effect transistors. However, we demonstrate that mobilities more than ten times higher, up to 8000 cm2/V/s, could be reached in Ge/Si NWs. Atomistic calculations reveal the considerable influence of the strains induced by the Si shell on the hole transport, whatever the NW orientation. The enhancement of electron-phonon interactions by confinement, which usually degrades the mobility in NWs, is therefore outbalanced by the effect of strains. |
| doi_str_mv | 10.1063/1.4903475 |
| format | Article |
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Reported hole mobilities of the order of 200 cm2/V/s are promising for high-performance field-effect transistors. However, we demonstrate that mobilities more than ten times higher, up to 8000 cm2/V/s, could be reached in Ge/Si NWs. Atomistic calculations reveal the considerable influence of the strains induced by the Si shell on the hole transport, whatever the NW orientation. 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Reported hole mobilities of the order of 200 cm2/V/s are promising for high-performance field-effect transistors. However, we demonstrate that mobilities more than ten times higher, up to 8000 cm2/V/s, could be reached in Ge/Si NWs. Atomistic calculations reveal the considerable influence of the strains induced by the Si shell on the hole transport, whatever the NW orientation. The enhancement of electron-phonon interactions by confinement, which usually degrades the mobility in NWs, is therefore outbalanced by the effect of strains.</description><subject>Applied physics</subject><subject>Condensed Matter</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Confinement</subject><subject>Electron phonon interactions</subject><subject>ELECTRON-PHONON COUPLING</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GERMANIUM</subject><subject>HOLE MOBILITY</subject><subject>HOLES</subject><subject>Materials Science</subject><subject>NANOELECTRONICS</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>NANOWIRES</subject><subject>ORIENTATION</subject><subject>Physics</subject><subject>Semiconductor devices</subject><subject>SILICON</subject><subject>STRAINS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLAzEQhYMoWKsH_0HAk4e1mWR2N-tFimgrFDyoeAxpdpZN2W7qJlX891Za9PSY9x4fzGPsEsQNiEJN4AYrobDMj9gIRFlmCkAfs5EQQmVFlcMpO4txtTtzqdSIzeahI74OS9_59M19z2c0efHchYEmsaWu473tw5cfKN7y99amXbTtar4knlriYZP8eru-O2cnje0iXRx0zN4eH17v59niefZ0P11kTuWYMiJcIrq8RiiFsLqulKa6EFhYB6RLRbpBmSMI1NhoAmsrqnNXKtuA0laN2dWeG2LyJjqfyLUu9D25ZKRUVY6V3LWu963WdmYz-LUdvk2w3synC_PrCQmq1BI_4Z-4GcLHlmIyq7Ad-t0TRoIssMJS4z_RDSHGgZo_LAjzu7wBc1he_QCpLXGv</recordid><startdate>20141208</startdate><enddate>20141208</enddate><creator>Li, Jing</creator><creator>Jomaa, Narjes</creator><creator>Niquet, Yann-Michel</creator><creator>Said, Moncef</creator><creator>Delerue, Christophe</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-0427-3001</orcidid><orcidid>https://orcid.org/0000-0002-9283-3821</orcidid></search><sort><creationdate>20141208</creationdate><title>Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?</title><author>Li, Jing ; Jomaa, Narjes ; Niquet, Yann-Michel ; Said, Moncef ; Delerue, Christophe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-ee4b44c5d41700a8d938ed6046ac1e873e8f425410484f8e1aa9ed5c73af138a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Condensed Matter</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Confinement</topic><topic>Electron phonon interactions</topic><topic>ELECTRON-PHONON COUPLING</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>GERMANIUM</topic><topic>HOLE MOBILITY</topic><topic>HOLES</topic><topic>Materials Science</topic><topic>NANOELECTRONICS</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>NANOWIRES</topic><topic>ORIENTATION</topic><topic>Physics</topic><topic>Semiconductor devices</topic><topic>SILICON</topic><topic>STRAINS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Jing</creatorcontrib><creatorcontrib>Jomaa, Narjes</creatorcontrib><creatorcontrib>Niquet, Yann-Michel</creatorcontrib><creatorcontrib>Said, Moncef</creatorcontrib><creatorcontrib>Delerue, Christophe</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Jing</au><au>Jomaa, Narjes</au><au>Niquet, Yann-Michel</au><au>Said, Moncef</au><au>Delerue, Christophe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?</atitle><jtitle>Applied physics letters</jtitle><date>2014-12-08</date><risdate>2014</risdate><volume>105</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Recent experimental works have shown that Ge/Si core/shell nanowires (NWs) are very attractive for nanoelectronics and for low-temperature quantum devices, thanks to the confinement of holes in the Ge core. 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| subjects | Applied physics Condensed Matter CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Confinement Electron phonon interactions ELECTRON-PHONON COUPLING FIELD EFFECT TRANSISTORS GERMANIUM HOLE MOBILITY HOLES Materials Science NANOELECTRONICS NANOSCIENCE AND NANOTECHNOLOGY NANOWIRES ORIENTATION Physics Semiconductor devices SILICON STRAINS |
| title | Hole mobility in Ge/Si core/shell nanowires: What could be the optimum? |
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