Analytical admittance characterization of high mobility channel

In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D...

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Bibliographische Detailangaben

Hauptverfasser:	Mammeri, A. M., Mahi, F. Z., Varani, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BRANCHING RATIO CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Dependence ELECTRIC CURRENTS Electrical impedance ELECTRON MOBILITY FIELD EFFECT TRANSISTORS FREQUENCY DEPENDENCE High electron mobility transistors MATHEMATICAL MODELS POISSON EQUATION Semiconductor devices SIGNALS Two dimensional models TWO-DIMENSIONAL CALCULATIONS
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