Mechanical property changes in porous low- k dielectric thin films during processing

The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric c...

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Veröffentlicht in:Applied physics letters 2014-10, Vol.105 (15)
Hauptverfasser: Stan, G., Gates, R. S., Kavuri, P., Torres, J., Michalak, D., Ege, C., Bielefeld, J., King, S. W.
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Sprache:eng
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