Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes
Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In1−x−Gax−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions...
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| Veröffentlicht in: | Applied physics letters 2014-09, Vol.105 (13) |
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| container_title | Applied physics letters |
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| creator | Kim, Jong-Hoon Lee, Ki-Heon Jo, Dae-Yeon Lee, Yangjin Hwang, Jun Yeon Yang, Heesun |
| description | Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In1−x−Gax−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement. |
| doi_str_mv | 10.1063/1.4896911 |
| format | Article |
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Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4896911</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CHARGE TRANSPORT ; Composition ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; COPPER COMPOUNDS ; EFFICIENCY ; Energy levels ; GALLIUM ; GALLIUM COMPOUNDS ; INDIUM ; INDIUM COMPOUNDS ; LAYERS ; LIGHT EMITTING DIODES ; NANOPARTICLES ; Organic light emitting diodes ; QUANTUM DOTS ; SOLID SOLUTIONS ; SULFUR COMPOUNDS ; SYNTHESIS ; Valence band ; Zinc oxide ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2014-09, Vol.105 (13)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-3ba685acff3d5c0b3fc61363337f572dc9c3c4c9479dfd6b6c625e6742b1f9ca3</citedby><cites>FETCH-LOGICAL-c285t-3ba685acff3d5c0b3fc61363337f572dc9c3c4c9479dfd6b6c625e6742b1f9ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22350815$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Jong-Hoon</creatorcontrib><creatorcontrib>Lee, Ki-Heon</creatorcontrib><creatorcontrib>Jo, Dae-Yeon</creatorcontrib><creatorcontrib>Lee, Yangjin</creatorcontrib><creatorcontrib>Hwang, Jun Yeon</creatorcontrib><creatorcontrib>Yang, Heesun</creatorcontrib><title>Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes</title><title>Applied physics letters</title><description>Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In1−x−Gax−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.</description><subject>Applied physics</subject><subject>CHARGE TRANSPORT</subject><subject>Composition</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>COPPER COMPOUNDS</subject><subject>EFFICIENCY</subject><subject>Energy levels</subject><subject>GALLIUM</subject><subject>GALLIUM COMPOUNDS</subject><subject>INDIUM</subject><subject>INDIUM COMPOUNDS</subject><subject>LAYERS</subject><subject>LIGHT EMITTING DIODES</subject><subject>NANOPARTICLES</subject><subject>Organic light emitting diodes</subject><subject>QUANTUM DOTS</subject><subject>SOLID SOLUTIONS</subject><subject>SULFUR COMPOUNDS</subject><subject>SYNTHESIS</subject><subject>Valence band</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkM1KxDAUhYMoOI4ufIOAKxfV_DRpu5TBPxBcqOuQuUk0Q5t0knTAN3DtI_okVhTcnHsufBwOB6FTSi4okfySXtRtJztK99CCkqapOKXtPloQQnglO0EP0VHOm_kVjPMFSqvp6-PzPsxyq2d5wttJhzIN2MSCIQ5jzL74GCpjRxuMDQUbu_Ng8WiTi2nQYfbRYdtbKMmD7vt3bJLf2YB7__pWKjv4Unx4xcZHY_MxOnC6z_bk7y7Ry8318-queni8vV9dPVTAWlEqvtayFRqc40YAWXMHknLJOW-caJiBDjjU0NVNZ5yRawmSCSubmq2p60DzJTr7zY25eJXBFwtvEEOYeyrGuCAtFf_UmOJ2srmoTZxSmIspRpkUdStFO1PnvxSkmHOyTo3JDzq9K0rUz_CKqr_h-TeDy3lI</recordid><startdate>20140929</startdate><enddate>20140929</enddate><creator>Kim, Jong-Hoon</creator><creator>Lee, Ki-Heon</creator><creator>Jo, Dae-Yeon</creator><creator>Lee, Yangjin</creator><creator>Hwang, Jun Yeon</creator><creator>Yang, Heesun</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140929</creationdate><title>Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes</title><author>Kim, Jong-Hoon ; Lee, Ki-Heon ; Jo, Dae-Yeon ; Lee, Yangjin ; Hwang, Jun Yeon ; Yang, Heesun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-3ba685acff3d5c0b3fc61363337f572dc9c3c4c9479dfd6b6c625e6742b1f9ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CHARGE TRANSPORT</topic><topic>Composition</topic><topic>CONCENTRATION RATIO</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>COPPER COMPOUNDS</topic><topic>EFFICIENCY</topic><topic>Energy levels</topic><topic>GALLIUM</topic><topic>GALLIUM COMPOUNDS</topic><topic>INDIUM</topic><topic>INDIUM COMPOUNDS</topic><topic>LAYERS</topic><topic>LIGHT EMITTING DIODES</topic><topic>NANOPARTICLES</topic><topic>Organic light emitting diodes</topic><topic>QUANTUM DOTS</topic><topic>SOLID SOLUTIONS</topic><topic>SULFUR COMPOUNDS</topic><topic>SYNTHESIS</topic><topic>Valence band</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jong-Hoon</creatorcontrib><creatorcontrib>Lee, Ki-Heon</creatorcontrib><creatorcontrib>Jo, Dae-Yeon</creatorcontrib><creatorcontrib>Lee, Yangjin</creatorcontrib><creatorcontrib>Hwang, Jun Yeon</creatorcontrib><creatorcontrib>Yang, Heesun</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jong-Hoon</au><au>Lee, Ki-Heon</au><au>Jo, Dae-Yeon</au><au>Lee, Yangjin</au><au>Hwang, Jun Yeon</au><au>Yang, Heesun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2014-09-29</date><risdate>2014</risdate><volume>105</volume><issue>13</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In1−x−Gax−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4896911</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-09, Vol.105 (13) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CHARGE TRANSPORT Composition CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COPPER COMPOUNDS EFFICIENCY Energy levels GALLIUM GALLIUM COMPOUNDS INDIUM INDIUM COMPOUNDS LAYERS LIGHT EMITTING DIODES NANOPARTICLES Organic light emitting diodes QUANTUM DOTS SOLID SOLUTIONS SULFUR COMPOUNDS SYNTHESIS Valence band Zinc oxide ZINC OXIDES |
| title | Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes |
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