Multi-spectral optical absorption in substrate-free nanowire arrays

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequent...

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Veröffentlicht in:	Applied physics letters 2014-09, Vol.105 (12)
Hauptverfasser:	Zhang, Junpeng, Dhindsa, Navneet, Chia, Andrew, Boulanger, Jonathan, Khodadad, Iman, Saini, Simarjeet, LaPierre, Ray
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorptance ABSORPTION Absorption spectra Absorptivity Applied physics Arrays Arsenides Gallium arsenide GALLIUM ARSENIDES Gallium indium phosphide GALLIUM PHOSPHIDES INDIUM COMPOUNDS Intermetallic compounds Ion etching IONS LAYERS NANOSCIENCE AND NANOTECHNOLOGY NANOWIRES PHOTODETECTORS Photovoltaic cells Reactive ion etching SOLAR CELLS SPECTRA SUBSTRATES SURFACES WAVELENGTHS
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