Near-infrared free carrier absorption in heavily doped silicon

Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic device...

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Veröffentlicht in:	Journal of applied physics 2014-08, Vol.116 (6)
Hauptverfasser:	Baker-Finch, Simeon C., McIntosh, Keith R., Yan, Di, Fong, Kean Chern, Kho, Teng C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorptance ABSORPTION Absorptivity Applied physics BORON CARRIERS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DENSITY DIFFUSION DISPERSIONS DOPED MATERIALS Near infrared radiation Optoelectronic devices Parameterization PHOSPHORUS PHOTONS Photovoltaic cells Reflectance SILICON Silicon wafers Solar cells WAVELENGTHS
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