Electron mobility calculation for graphene on substrates
By a semiclassical Monte Carlo method, the electron mobility in graphene is calculated for three different substrates: SiO2, HfO2, and hexagonal boron nitride (h-BN). The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impuri...
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| Veröffentlicht in: | Journal of applied physics 2014-08, Vol.116 (8) |
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| container_title | Journal of applied physics |
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| creator | Hirai, Hideki Tsuchiya, Hideaki Kamakura, Yoshinari Mori, Nobuya Ogawa, Matsuto |
| description | By a semiclassical Monte Carlo method, the electron mobility in graphene is calculated for three different substrates: SiO2, HfO2, and hexagonal boron nitride (h-BN). The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO2 is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO2 and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170 000 cm2/(V·s) for electron densities less than 1012 cm−2. Therefore, h-BN should be an appealing substrate for graphene devices, as confirmed experimentally. |
| doi_str_mv | 10.1063/1.4893650 |
| format | Article |
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The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO2 is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO2 and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170 000 cm2/(V·s) for electron densities less than 1012 cm−2. 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The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO2 is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO2 and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170 000 cm2/(V·s) for electron densities less than 1012 cm−2. Therefore, h-BN should be an appealing substrate for graphene devices, as confirmed experimentally.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4893650</doi><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | APPEALS Applied physics Boron nitride BORON NITRIDES CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRON DENSITY ELECTRON MOBILITY Electrons GRAPHENE Hafnium oxide HAFNIUM OXIDES IMPURITIES Mathematical analysis MONTE CARLO METHOD Monte Carlo simulation PHONONS SCATTERING SEMICLASSICAL APPROXIMATION SILICA Silicon dioxide SILICON OXIDES SUBSTRATES SURFACES |
| title | Electron mobility calculation for graphene on substrates |
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