Stress management for 3D through-silicon-via stacking technologies - The next frontier
The status of the development of a Design-for-Stress simulation flow that captures the stress effects in packaged 3D-stacked Si products like integrated circuits (ICs) using advanced via-middle Through Si Via technology is outlined. The next set of challenges required to proliferate the methodology...
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| creator | Riko, Radojcic Nowak, Matt Nakamoto, Mark |
| description | The status of the development of a Design-for-Stress simulation flow that captures the stress effects in packaged 3D-stacked Si products like integrated circuits (ICs) using advanced via-middle Through Si Via technology is outlined. The next set of challenges required to proliferate the methodology and to deploy it for making and dispositioning real Si product decisions are described here. These include the adoption and support of a Process Design Kit (PDK) that includes the relevant material properties, the development of stress simulation methodologies that operate at higher levels of abstraction in a design flow, and the development and adoption of suitable models required to make real product reliability decisions. |
| doi_str_mv | 10.1063/1.4881338 |
| format | Conference Proceeding |
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The next set of challenges required to proliferate the methodology and to deploy it for making and dispositioning real Si product decisions are described here. 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| fulltext | fulltext |
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| ispartof | AIP Conference Proceedings, 2014, Vol.1601 (1), p.17 |
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| language | eng |
| recordid | cdi_osti_scitechconnect_22311264 |
| source | AIP Journals Complete |
| subjects | Computer simulation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Decisions DESIGN INTEGRATED CIRCUITS Material properties MATHEMATICAL MODELS Product reliability RELIABILITY SILICON STRESSES THREE-DIMENSIONAL CALCULATIONS |
| title | Stress management for 3D through-silicon-via stacking technologies - The next frontier |
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