Band alignment of HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N determined by angle-resolved x-ray photoelectron spectroscopy

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. The band bending near the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface was investigated, and the potential variation...

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Veröffentlicht in:	Applied physics letters 2014-07, Vol.105 (3)
Hauptverfasser:	Owen, Man Hon Samuel, Bhuiyan, Maruf Amin, Yeo, Yee-Chia, Zhang, Zheng, Pan, Ji Sheng, Tok, Eng Soon
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM COMPOUNDS BENDING BINDING ENERGY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DEPOSITION HAFNIUM OXIDES INDIUM COMPOUNDS INTERFACES LAYERS NITROGEN COMPOUNDS RESOLUTION VALENCE X-RAY PHOTOELECTRON SPECTROSCOPY
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