Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors

Solution-processed ultra-thin (∼3 nm) zinc tin oxide (ZTO) thin film transistors (TFTs) with a mobility of 8 cm2/Vs are obtained with post spin-coating annealing at only 350 °C. The effect of light illumination (at wavelengths of 405 nm or 532 nm) on the stability of TFT transfer characteristics und...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (2)
Hauptverfasser: Liu, Li-Chih, Chen, Jen-Sue, Jeng, Jiann-Shing
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description Solution-processed ultra-thin (∼3 nm) zinc tin oxide (ZTO) thin film transistors (TFTs) with a mobility of 8 cm2/Vs are obtained with post spin-coating annealing at only 350 °C. The effect of light illumination (at wavelengths of 405 nm or 532 nm) on the stability of TFT transfer characteristics under various gate bias stress conditions (zero, positive, and negative) is investigated. It is found that the ΔVth (Vthstress 3400 s − stress 0 s) window is significantly positive when ZTO TFTs are under positive bias stress (PBS, ΔVth = 9.98 V) and positive bias illumination stress (λ = 405 nm and ΔVth = 6.96 V), but ΔVth is slightly negative under only light illumination stress (λ = 405 nm and ΔVth = −2.02 V) or negative bias stress (ΔVth = −2.27 V). However, the ΔVth of ZTO TFT under negative bias illumination stress is substantial, and it will efficiently recover the ΔVth caused by PBS. The result is attributed to the photo-ionization and subsequent transition of electronic states of oxygen vacancies (i.e., Vo, Vo+, and Vo++) in ZTO. A detailed mechanism is discussed to better understand the bias stress stability of solution processed ZTO TFTs.
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The effect of light illumination (at wavelengths of 405 nm or 532 nm) on the stability of TFT transfer characteristics under various gate bias stress conditions (zero, positive, and negative) is investigated. It is found that the ΔVth (Vthstress 3400 s − stress 0 s) window is significantly positive when ZTO TFTs are under positive bias stress (PBS, ΔVth = 9.98 V) and positive bias illumination stress (λ = 405 nm and ΔVth = 6.96 V), but ΔVth is slightly negative under only light illumination stress (λ = 405 nm and ΔVth = −2.02 V) or negative bias stress (ΔVth = −2.27 V). However, the ΔVth of ZTO TFT under negative bias illumination stress is substantial, and it will efficiently recover the ΔVth caused by PBS. The result is attributed to the photo-ionization and subsequent transition of electronic states of oxygen vacancies (i.e., Vo, Vo+, and Vo++) in ZTO. A detailed mechanism is discussed to better understand the bias stress stability of solution processed ZTO TFTs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4890579</doi></addata></record>
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subjects ANNEALING
Applied physics
Bias
CARRIER MOBILITY
Coating effects
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electron states
ILLUMINANCE
Illumination
Ionization
Light
OXYGEN
Semiconductor devices
SIMULATION
Spin coating
SPIN-ON COATING
STABILITY
STRESSES
Thin film transistors
THIN FILMS
TIN OXIDES
TRANSISTORS
VACANCIES
VISIBLE RADIATION
WAVELENGTHS
ZINC
ZINC OXIDES
title Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
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