Electromagnetic model for near-field microwave microscope with atomic resolution: Determination of tunnel junction impedance

An electrodynamic model is proposed for the tunneling microwave microscope with subnanometer space resolution as developed by Lee et al. [Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Za was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the m...

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Veröffentlicht in:Applied physics letters 2014-08, Vol.105 (8)
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description An electrodynamic model is proposed for the tunneling microwave microscope with subnanometer space resolution as developed by Lee et al. [Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Za was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the microwave current between probe and sample flows along two parallel channels characterized by impedances Zp and Zt that add up to form overall impedance Za. Quantity Zp is the capacitive impedance determined by the near field of the probe and Zt is the impedance of the tunnel junction. By taking into account the distance dependences of effective tip radius r0(z) and tunnel resistance Rt(z) = Re[Zt(z)], we were able to explain the experimentally observed dependences of resonance frequency fr(z) and quality factor QL(z) of the microscope. The obtained microwave resistance Rt(z) and direct current tunnel resistance Rtdc(z) exhibit qualitatively similar behavior, although being largely different in both magnitude and the characteristic scale of height dependence. Interpretation of the microwave images of the atomic structure of test samples proved possible by taking into account the inductive component of tunnel impedance ImZt = ωLt. Relation ωLt/Rt ≈ 0.235 was obtained.
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[Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Za was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the microwave current between probe and sample flows along two parallel channels characterized by impedances Zp and Zt that add up to form overall impedance Za. Quantity Zp is the capacitive impedance determined by the near field of the probe and Zt is the impedance of the tunnel junction. By taking into account the distance dependences of effective tip radius r0(z) and tunnel resistance Rt(z) = Re[Zt(z)], we were able to explain the experimentally observed dependences of resonance frequency fr(z) and quality factor QL(z) of the microscope. The obtained microwave resistance Rt(z) and direct current tunnel resistance Rtdc(z) exhibit qualitatively similar behavior, although being largely different in both magnitude and the characteristic scale of height dependence. Interpretation of the microwave images of the atomic structure of test samples proved possible by taking into account the inductive component of tunnel impedance ImZt = ωLt. Relation ωLt/Rt ≈ 0.235 was obtained.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4894369</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Atomic structure ; BREAKDOWN ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Dependence ; DIRECT CURRENT ; DISTANCE ; ELECTRODYNAMICS ; HEIGHT ; IMPEDANCE ; MICROSCOPES ; MICROWAVE RADIATION ; PROBES ; Q factors ; QUALITY FACTOR ; RESOLUTION ; SIMULATION ; SPACE ; SUPERCONDUCTING JUNCTIONS ; TUNNEL DIODES ; TUNNEL EFFECT ; Tunnel junctions</subject><ispartof>Applied physics letters, 2014-08, Vol.105 (8)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-187e92e97057b1ecfbf797ff617c28170298b4722afc7dbdcfb94d49003b494e3</citedby><cites>FETCH-LOGICAL-c285t-187e92e97057b1ecfbf797ff617c28170298b4722afc7dbdcfb94d49003b494e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22310989$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Reznik, Alexander N.</creatorcontrib><title>Electromagnetic model for near-field microwave microscope with atomic resolution: Determination of tunnel junction impedance</title><title>Applied physics letters</title><description>An electrodynamic model is proposed for the tunneling microwave microscope with subnanometer space resolution as developed by Lee et al. [Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Za was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the microwave current between probe and sample flows along two parallel channels characterized by impedances Zp and Zt that add up to form overall impedance Za. Quantity Zp is the capacitive impedance determined by the near field of the probe and Zt is the impedance of the tunnel junction. By taking into account the distance dependences of effective tip radius r0(z) and tunnel resistance Rt(z) = Re[Zt(z)], we were able to explain the experimentally observed dependences of resonance frequency fr(z) and quality factor QL(z) of the microscope. The obtained microwave resistance Rt(z) and direct current tunnel resistance Rtdc(z) exhibit qualitatively similar behavior, although being largely different in both magnitude and the characteristic scale of height dependence. Interpretation of the microwave images of the atomic structure of test samples proved possible by taking into account the inductive component of tunnel impedance ImZt = ωLt. 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[Appl. Phys. Lett. 97, 183111 (2010)]. Tip-sample impedance Za was introduced and studied in the tunneling and non-tunneling regimes. At tunneling breakdown, the microwave current between probe and sample flows along two parallel channels characterized by impedances Zp and Zt that add up to form overall impedance Za. Quantity Zp is the capacitive impedance determined by the near field of the probe and Zt is the impedance of the tunnel junction. By taking into account the distance dependences of effective tip radius r0(z) and tunnel resistance Rt(z) = Re[Zt(z)], we were able to explain the experimentally observed dependences of resonance frequency fr(z) and quality factor QL(z) of the microscope. The obtained microwave resistance Rt(z) and direct current tunnel resistance Rtdc(z) exhibit qualitatively similar behavior, although being largely different in both magnitude and the characteristic scale of height dependence. Interpretation of the microwave images of the atomic structure of test samples proved possible by taking into account the inductive component of tunnel impedance ImZt = ωLt. Relation ωLt/Rt ≈ 0.235 was obtained.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4894369</doi></addata></record>
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Atomic structure
BREAKDOWN
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dependence
DIRECT CURRENT
DISTANCE
ELECTRODYNAMICS
HEIGHT
IMPEDANCE
MICROSCOPES
MICROWAVE RADIATION
PROBES
Q factors
QUALITY FACTOR
RESOLUTION
SIMULATION
SPACE
SUPERCONDUCTING JUNCTIONS
TUNNEL DIODES
TUNNEL EFFECT
Tunnel junctions
title Electromagnetic model for near-field microwave microscope with atomic resolution: Determination of tunnel junction impedance
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