Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling
Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction me...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2014-08, Vol.105 (8) |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 8 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 105 |
| creator | Alimardani, Nasir Conley, John F. |
| description | Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta2O5 via defect based conduction before tunneling directly through the Al2O3, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature. |
| doi_str_mv | 10.1063/1.4893735 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22310962</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2126566522</sourcerecordid><originalsourceid>FETCH-LOGICAL-c386t-666182403cb4e06fc02af035e0bf60bb2800e799cc95890bd4a114321da416f3</originalsourceid><addsrcrecordid>eNpNkE9Lw0AQxRdRsFYPfoOAJw-pM7vJJjlKqVUoeOlRWDabid2SZuvuRvDbm_4BPc083o_H4zF2jzBDkOIJZ1lZiULkF2yCUBSpQCwv2QQARCqrHK_ZTQjbUeZciAn7WPQb3RvbfyY7irpLbR-GTkfn_31HJ4lD31OXNNY1FJJvq5OGWjIxoWMENaPlD_oEjpG37KrVXaC7852y9ctiPX9NV-_Lt_nzKjWilDGVUmLJMxCmzghka4DrFkROULcS6pqXAFRUlTFVXlZQN5lGzATHRmcoWzFlD6dYF6JVwdhIZmPcWMJExblAqCT_o_befQ0Uotq6wfdjL8WRy1zKnB-oxxNlvAvBU6v23u60_1EI6rCwQnVeWPwCkt5s4g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2126566522</pqid></control><display><type>article</type><title>Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Alimardani, Nasir ; Conley, John F.</creator><creatorcontrib>Alimardani, Nasir ; Conley, John F.</creatorcontrib><description>Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta2O5 via defect based conduction before tunneling directly through the Al2O3, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4893735</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM OXIDES ; Aluminum oxide ; Applied physics ; ASYMMETRY ; Atomic layer epitaxy ; Bilayers ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DEFECTS ; DIFFUSION BARRIERS ; Dissimilar metals ; ELECTRIC POTENTIAL ; ELECTRODES ; Electron affinity ; EMISSION ; Insulators ; LAYERS ; Linearity ; Low voltage ; METALS ; Tantalum ; TANTALUM OXIDES ; TUNNEL DIODES ; TUNNEL EFFECT ; WORK FUNCTIONS</subject><ispartof>Applied physics letters, 2014-08, Vol.105 (8)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-666182403cb4e06fc02af035e0bf60bb2800e799cc95890bd4a114321da416f3</citedby><cites>FETCH-LOGICAL-c386t-666182403cb4e06fc02af035e0bf60bb2800e799cc95890bd4a114321da416f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22310962$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Alimardani, Nasir</creatorcontrib><creatorcontrib>Conley, John F.</creatorcontrib><title>Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling</title><title>Applied physics letters</title><description>Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta2O5 via defect based conduction before tunneling directly through the Al2O3, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.</description><subject>ALUMINIUM OXIDES</subject><subject>Aluminum oxide</subject><subject>Applied physics</subject><subject>ASYMMETRY</subject><subject>Atomic layer epitaxy</subject><subject>Bilayers</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DEFECTS</subject><subject>DIFFUSION BARRIERS</subject><subject>Dissimilar metals</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRODES</subject><subject>Electron affinity</subject><subject>EMISSION</subject><subject>Insulators</subject><subject>LAYERS</subject><subject>Linearity</subject><subject>Low voltage</subject><subject>METALS</subject><subject>Tantalum</subject><subject>TANTALUM OXIDES</subject><subject>TUNNEL DIODES</subject><subject>TUNNEL EFFECT</subject><subject>WORK FUNCTIONS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNkE9Lw0AQxRdRsFYPfoOAJw-pM7vJJjlKqVUoeOlRWDabid2SZuvuRvDbm_4BPc083o_H4zF2jzBDkOIJZ1lZiULkF2yCUBSpQCwv2QQARCqrHK_ZTQjbUeZciAn7WPQb3RvbfyY7irpLbR-GTkfn_31HJ4lD31OXNNY1FJJvq5OGWjIxoWMENaPlD_oEjpG37KrVXaC7852y9ctiPX9NV-_Lt_nzKjWilDGVUmLJMxCmzghka4DrFkROULcS6pqXAFRUlTFVXlZQN5lGzATHRmcoWzFlD6dYF6JVwdhIZmPcWMJExblAqCT_o_befQ0Uotq6wfdjL8WRy1zKnB-oxxNlvAvBU6v23u60_1EI6rCwQnVeWPwCkt5s4g</recordid><startdate>20140825</startdate><enddate>20140825</enddate><creator>Alimardani, Nasir</creator><creator>Conley, John F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140825</creationdate><title>Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling</title><author>Alimardani, Nasir ; Conley, John F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-666182403cb4e06fc02af035e0bf60bb2800e799cc95890bd4a114321da416f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALUMINIUM OXIDES</topic><topic>Aluminum oxide</topic><topic>Applied physics</topic><topic>ASYMMETRY</topic><topic>Atomic layer epitaxy</topic><topic>Bilayers</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DEFECTS</topic><topic>DIFFUSION BARRIERS</topic><topic>Dissimilar metals</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRODES</topic><topic>Electron affinity</topic><topic>EMISSION</topic><topic>Insulators</topic><topic>LAYERS</topic><topic>Linearity</topic><topic>Low voltage</topic><topic>METALS</topic><topic>Tantalum</topic><topic>TANTALUM OXIDES</topic><topic>TUNNEL DIODES</topic><topic>TUNNEL EFFECT</topic><topic>WORK FUNCTIONS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alimardani, Nasir</creatorcontrib><creatorcontrib>Conley, John F.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alimardani, Nasir</au><au>Conley, John F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling</atitle><jtitle>Applied physics letters</jtitle><date>2014-08-25</date><risdate>2014</risdate><volume>105</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta2O5 via defect based conduction before tunneling directly through the Al2O3, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4893735</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2014-08, Vol.105 (8) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22310962 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ALUMINIUM OXIDES Aluminum oxide Applied physics ASYMMETRY Atomic layer epitaxy Bilayers CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DEFECTS DIFFUSION BARRIERS Dissimilar metals ELECTRIC POTENTIAL ELECTRODES Electron affinity EMISSION Insulators LAYERS Linearity Low voltage METALS Tantalum TANTALUM OXIDES TUNNEL DIODES TUNNEL EFFECT WORK FUNCTIONS |
| title | Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T15%3A18%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancing%20metal-insulator-insulator-metal%20tunnel%20diodes%20via%20defect%20enhanced%20direct%20tunneling&rft.jtitle=Applied%20physics%20letters&rft.au=Alimardani,%20Nasir&rft.date=2014-08-25&rft.volume=105&rft.issue=8&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4893735&rft_dat=%3Cproquest_osti_%3E2126566522%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2126566522&rft_id=info:pmid/&rfr_iscdi=true |