Charge tuning in [111] grown GaAs droplet quantum dots

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from −3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recor...

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Veröffentlicht in:	Applied physics letters 2014-08, Vol.105 (8)
Hauptverfasser:	Bouet, L., Vidal, M., Mano, T., Ha, N., Kuroda, T., Durnev, M. V., Glazov, M. M., Ivchenko, E. L., Marie, X., Amand, T., Sakoda, K., Wang, G., Urbaszek, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM COMPOUNDS AMPLITUDES Applied physics Charging CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Diamagnetism DROPLETS ELECTRIC POTENTIAL Emission ENERGY-LEVEL TRANSITIONS Epitaxial growth EPITAXY EXCITONS FINE STRUCTURE Gallium arsenide GALLIUM ARSENIDES GROUND STATES MAGNETIC FIELDS MEV RANGE Optics PHOTOLUMINESCENCE Physics QUANTUM DOTS SHELLS STRAINS SUBSTRATES TEMPERATURE RANGE 0000-0013 K TUNING VALENCE
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