Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

We report the observation, through Shubnikov-de Haas oscillations in the magnetoresistance, of spin splitting caused by the Rashba spin-orbit interaction in a strained Ge quantum well epitaxially grown on a standard Si(001) substrate. The Shubnikov-de Haas oscillations display a beating pattern due...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 2014-11, Vol.105 (18)
Hauptverfasser:	Morrison, C., Wiśniewski, P., Rhead, S. D., Foronda, J., Leadley, D. R., Myronov, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRON GAS Epitaxial growth EPITAXY GERMANIUM Group III-V semiconductors HOLES L-S COUPLING MAGNETORESISTANCE Magnetoresistivity OSCILLATIONS QUANTUM WELLS SEMICONDUCTOR MATERIALS SHUBNIKOV-DE HAAS EFFECT SILICON Silicon substrates SPIN Spin-orbit interactions Splitting STRAINS SUBSTRATES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!