High-fluence Ga-implanted silicon—The effect of annealing and cover layers

The influence of SiO2 and SiNx cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid therm...

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Veröffentlicht in:	Journal of applied physics 2014-07, Vol.116 (2)
Hauptverfasser:	Fiedler, J., Heera, V., Hübner, R., Voelskow, M., Germer, S., Schmidt, B., Skorupa, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING Applied physics Chemical precipitation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DISTRIBUTION EQUILIBRIUM Flash lamps Fluence GALLIUM ADDITIONS Implantation INTERFACES LATTICE PARAMETERS LAYERS MICROSTRUCTURE PHASE DIAGRAMS POLYCRYSTALS Precipitates PRECIPITATION SILICON Silicon dioxide SILICON NITRIDES SILICON OXIDES SOLUBILITY
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