Stress enhanced diffusion of krypton ions in polycrystalline titanium
An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was...
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| Veröffentlicht in: | Journal of applied physics 2014-07, Vol.116 (2) |
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| container_title | Journal of applied physics |
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| creator | Nsengiyumva, S. Raji, A. T. Rivière, J. P. Britton, D. T. Härting, M. |
| description | An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium. |
| doi_str_mv | 10.1063/1.4889818 |
| format | Article |
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T. ; Rivière, J. P. ; Britton, D. T. ; Härting, M.</creator><creatorcontrib>Nsengiyumva, S. ; Raji, A. T. ; Rivière, J. P. ; Britton, D. T. ; Härting, M.</creatorcontrib><description>An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4889818</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Analytical techniques ; Applied physics ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL DEFECTS ; DIFFUSION ; Enhanced diffusion ; INCLUSIONS ; ION BEAMS ; ION IMPLANTATION ; Krypton ; KRYPTON IONS ; POINT DEFECTS ; POLYCRYSTALS ; Residual stress ; RESIDUAL STRESSES ; STRESS ANALYSIS ; SURFACES ; SYNCHROTRON RADIATION ; TITANIUM ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2014-07, Vol.116 (2)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-8eedf6926de9ba223e0e899fbde4aafd36dae6d524ba0398b4fc9a8c860e855b3</citedby><cites>FETCH-LOGICAL-c285t-8eedf6926de9ba223e0e899fbde4aafd36dae6d524ba0398b4fc9a8c860e855b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22308721$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Nsengiyumva, S.</creatorcontrib><creatorcontrib>Raji, A. T.</creatorcontrib><creatorcontrib>Rivière, J. P.</creatorcontrib><creatorcontrib>Britton, D. T.</creatorcontrib><creatorcontrib>Härting, M.</creatorcontrib><title>Stress enhanced diffusion of krypton ions in polycrystalline titanium</title><title>Journal of applied physics</title><description>An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium.</description><subject>Analytical techniques</subject><subject>Applied physics</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL DEFECTS</subject><subject>DIFFUSION</subject><subject>Enhanced diffusion</subject><subject>INCLUSIONS</subject><subject>ION BEAMS</subject><subject>ION IMPLANTATION</subject><subject>Krypton</subject><subject>KRYPTON IONS</subject><subject>POINT DEFECTS</subject><subject>POLYCRYSTALS</subject><subject>Residual stress</subject><subject>RESIDUAL STRESSES</subject><subject>STRESS ANALYSIS</subject><subject>SURFACES</subject><subject>SYNCHROTRON RADIATION</subject><subject>TITANIUM</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLwzAcxYMoOKcHv0HBk4fOJG3a5ChjTmHgQT2HNPmHZXZJTdJDv72VDTy99-DH4_EQuid4RXBTPZFVzbnghF-gBcFclC1j-BItMKak5KIV1-gmpQPGhPBKLNDmI0dIqQC_V16DKYyzdkwu-CLY4jtOQ57tHFPhfDGEftJxSln1vfNQZJeVd-PxFl1Z1Se4O-sSfb1sPtev5e59-7Z-3pWacpZLDmBsI2hjQHSK0gowcCFsZ6BWypqqMQoaw2jdKVwJ3tVWC8U1b2aOsa5aoodTb0jZyaRdBr3XwXvQWc59mLeU_FNDDD8jpCwPYYx-HiYpoQ1ra8zqmXo8UTqGlCJYOUR3VHGSBMu_LyWR5y-rX0eyZtw</recordid><startdate>20140714</startdate><enddate>20140714</enddate><creator>Nsengiyumva, S.</creator><creator>Raji, A. 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T.</creatorcontrib><creatorcontrib>Rivière, J. P.</creatorcontrib><creatorcontrib>Britton, D. T.</creatorcontrib><creatorcontrib>Härting, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nsengiyumva, S.</au><au>Raji, A. T.</au><au>Rivière, J. P.</au><au>Britton, D. T.</au><au>Härting, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stress enhanced diffusion of krypton ions in polycrystalline titanium</atitle><jtitle>Journal of applied physics</jtitle><date>2014-07-14</date><risdate>2014</risdate><volume>116</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4889818</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2014-07, Vol.116 (2) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Analytical techniques Applied physics CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS DIFFUSION Enhanced diffusion INCLUSIONS ION BEAMS ION IMPLANTATION Krypton KRYPTON IONS POINT DEFECTS POLYCRYSTALS Residual stress RESIDUAL STRESSES STRESS ANALYSIS SURFACES SYNCHROTRON RADIATION TITANIUM X-RAY DIFFRACTION |
| title | Stress enhanced diffusion of krypton ions in polycrystalline titanium |
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