Importance of growth direction in mid-infrared quantum cascade lasers
We report on the effect of growth direction on the performance of mid-infrared Quantum Cascade lasers. The design used has a symmetric active core, capable of operating under both negative and positive polarities, which allows to test for residual growth asymmetries such as interface roughness and d...
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| Veröffentlicht in: | Journal of applied physics 2014-07, Vol.116 (3) |
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| container_title | Journal of applied physics |
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| creator | Bouzi, Pierre M. Chiu, YenTing Deutsch, Christoph Dikmelik, Yamac Song, Yu Tokranov, Vadim Oktyabrsky, Serge Gmachl, Claire |
| description | We report on the effect of growth direction on the performance of mid-infrared Quantum Cascade lasers. The design used has a symmetric active core, capable of operating under both negative and positive polarities, which allows to test for residual growth asymmetries such as interface roughness and dopant migration. Calculations of scattering lifetimes from interface roughness and ionized impurities suggest a dominant contribution from the former, with devices biased positively averaging ∼15% larger broadening and ∼50% shorter upper state lifetime than negatively biased devices. Experimental results for positively biased devices show at least 30% larger broadening and 35% lower electroluminescence peak intensity than those biased negatively, in good agreement with the modeling results. |
| doi_str_mv | 10.1063/1.4890311 |
| format | Article |
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The design used has a symmetric active core, capable of operating under both negative and positive polarities, which allows to test for residual growth asymmetries such as interface roughness and dopant migration. Calculations of scattering lifetimes from interface roughness and ionized impurities suggest a dominant contribution from the former, with devices biased positively averaging ∼15% larger broadening and ∼50% shorter upper state lifetime than negatively biased devices. 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The design used has a symmetric active core, capable of operating under both negative and positive polarities, which allows to test for residual growth asymmetries such as interface roughness and dopant migration. Calculations of scattering lifetimes from interface roughness and ionized impurities suggest a dominant contribution from the former, with devices biased positively averaging ∼15% larger broadening and ∼50% shorter upper state lifetime than negatively biased devices. Experimental results for positively biased devices show at least 30% larger broadening and 35% lower electroluminescence peak intensity than those biased negatively, in good agreement with the modeling results.</description><subject>Applied physics</subject><subject>ASYMMETRY</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTROLUMINESCENCE</subject><subject>IMPURITIES</subject><subject>Infrared lasers</subject><subject>Interface roughness</subject><subject>INTERFACES</subject><subject>INTERMEDIATE INFRARED RADIATION</subject><subject>LASER MATERIALS</subject><subject>LASER RADIATION</subject><subject>LIFETIME</subject><subject>MIGRATION</subject><subject>Quantum cascade lasers</subject><subject>ROUGHNESS</subject><subject>SCATTERING</subject><subject>Service life assessment</subject><subject>SIMULATION</subject><subject>SYMMETRY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkMFKAzEURYMoWKsL_yDgysXU95LJdLKUUrVQcKPrkGYSm9KZtEkG8e-NtCA8eJvDuZdLyD3CDKHhTzirWwkc8YJMEFpZzYWASzIBYFi1ci6vyU1KOwDElssJWa76Q4hZD8bS4OhXDN95Szsfrck-DNQPtPdd5QcXdbQdPY56yGNPjU5Gd5budbIx3ZIrp_fJ3p3_lHy-LD8Wb9X6_XW1eF5XhjPIleClEUpwddcKhug2bON4W0RdC6wRtasFOtHUUttyWjKLVtimEJYZ3vEpeTh5Q8peJeOzNVsThqG0VYwVvQD4pw4xHEebstqFMQ6lmGJYYiSbAyvU44kyMaQUrVOH6HsdfxSC-ttSoTpvyX8BnAZkwQ</recordid><startdate>20140721</startdate><enddate>20140721</enddate><creator>Bouzi, Pierre M.</creator><creator>Chiu, YenTing</creator><creator>Deutsch, Christoph</creator><creator>Dikmelik, Yamac</creator><creator>Song, Yu</creator><creator>Tokranov, Vadim</creator><creator>Oktyabrsky, Serge</creator><creator>Gmachl, Claire</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140721</creationdate><title>Importance of growth direction in mid-infrared quantum cascade lasers</title><author>Bouzi, Pierre M. ; Chiu, YenTing ; Deutsch, Christoph ; Dikmelik, Yamac ; Song, Yu ; Tokranov, Vadim ; Oktyabrsky, Serge ; Gmachl, Claire</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-53089190f4d85211fb2bf38cadd802654f451f5649ae9aea92e1e5e68cae2c3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>ASYMMETRY</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTROLUMINESCENCE</topic><topic>IMPURITIES</topic><topic>Infrared lasers</topic><topic>Interface roughness</topic><topic>INTERFACES</topic><topic>INTERMEDIATE INFRARED RADIATION</topic><topic>LASER MATERIALS</topic><topic>LASER RADIATION</topic><topic>LIFETIME</topic><topic>MIGRATION</topic><topic>Quantum cascade lasers</topic><topic>ROUGHNESS</topic><topic>SCATTERING</topic><topic>Service life assessment</topic><topic>SIMULATION</topic><topic>SYMMETRY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bouzi, Pierre M.</creatorcontrib><creatorcontrib>Chiu, YenTing</creatorcontrib><creatorcontrib>Deutsch, Christoph</creatorcontrib><creatorcontrib>Dikmelik, Yamac</creatorcontrib><creatorcontrib>Song, Yu</creatorcontrib><creatorcontrib>Tokranov, Vadim</creatorcontrib><creatorcontrib>Oktyabrsky, Serge</creatorcontrib><creatorcontrib>Gmachl, Claire</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bouzi, Pierre M.</au><au>Chiu, YenTing</au><au>Deutsch, Christoph</au><au>Dikmelik, Yamac</au><au>Song, Yu</au><au>Tokranov, Vadim</au><au>Oktyabrsky, Serge</au><au>Gmachl, Claire</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Importance of growth direction in mid-infrared quantum cascade lasers</atitle><jtitle>Journal of applied physics</jtitle><date>2014-07-21</date><risdate>2014</risdate><volume>116</volume><issue>3</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We report on the effect of growth direction on the performance of mid-infrared Quantum Cascade lasers. The design used has a symmetric active core, capable of operating under both negative and positive polarities, which allows to test for residual growth asymmetries such as interface roughness and dopant migration. Calculations of scattering lifetimes from interface roughness and ionized impurities suggest a dominant contribution from the former, with devices biased positively averaging ∼15% larger broadening and ∼50% shorter upper state lifetime than negatively biased devices. Experimental results for positively biased devices show at least 30% larger broadening and 35% lower electroluminescence peak intensity than those biased negatively, in good agreement with the modeling results.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4890311</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2014-07, Vol.116 (3) |
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| recordid | cdi_osti_scitechconnect_22308500 |
| source | 美国小型学会期刊集（AIP Scitation平台）; Alma/SFX Local Collection |
| subjects | Applied physics ASYMMETRY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH ELECTROLUMINESCENCE IMPURITIES Infrared lasers Interface roughness INTERFACES INTERMEDIATE INFRARED RADIATION LASER MATERIALS LASER RADIATION LIFETIME MIGRATION Quantum cascade lasers ROUGHNESS SCATTERING Service life assessment SIMULATION SYMMETRY |
| title | Importance of growth direction in mid-infrared quantum cascade lasers |
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