Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy
The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignm...
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Veröffentlicht in: | Journal of applied physics 2014-10, Vol.116 (16) |
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creator | Nakasu, T. Yamashita, S. Aiba, T. Hattori, S. Sun, W. Taguri, K. Kazami, F. Kobayashi, M. |
description | The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire. |
doi_str_mv | 10.1063/1.4900739 |
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For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4900739</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Crystal structure ; CRYSTALLOGRAPHY ; CRYSTALS ; Heterostructures ; LAYERS ; MOLECULAR BEAM EPITAXY ; ORIENTATION ; SAPPHIRE ; SUBSTRATES ; Terahertz frequencies ; THIN FILMS ; X-RAY DIFFRACTION ; ZINC TELLURIDES</subject><ispartof>Journal of applied physics, 2014-10, Vol.116 (16)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-fbdca6570e562e1d945721fc77b19fd33dcee2fe2d340e78c52f3cf849f8ef383</citedby><cites>FETCH-LOGICAL-c386t-fbdca6570e562e1d945721fc77b19fd33dcee2fe2d340e78c52f3cf849f8ef383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22308150$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Nakasu, T.</creatorcontrib><creatorcontrib>Yamashita, S.</creatorcontrib><creatorcontrib>Aiba, T.</creatorcontrib><creatorcontrib>Hattori, S.</creatorcontrib><creatorcontrib>Sun, W.</creatorcontrib><creatorcontrib>Taguri, K.</creatorcontrib><creatorcontrib>Kazami, F.</creatorcontrib><creatorcontrib>Kobayashi, M.</creatorcontrib><title>Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy</title><title>Journal of applied physics</title><description>The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.</description><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Crystal structure</subject><subject>CRYSTALLOGRAPHY</subject><subject>CRYSTALS</subject><subject>Heterostructures</subject><subject>LAYERS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>ORIENTATION</subject><subject>SAPPHIRE</subject><subject>SUBSTRATES</subject><subject>Terahertz frequencies</subject><subject>THIN FILMS</subject><subject>X-RAY DIFFRACTION</subject><subject>ZINC TELLURIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNkUtLxDAUhYMoOI4u_AcBVy6qeTRtspTBFwhuxo2bkKY3TIa2qUkG7NJ_bocZ0NXdfN_hXA5C15TcUVLxe3pXKkJqrk7QghKpiloIcooWhDBaSFWrc3SR0pYQSiVXC_SzilPKpsMhehiyyT4MuAe7MYNPPQ4Ofw5rwDD6zkwQE3Yh9tDimWq9cxBn6b-b9koy47jxEXDaNSlHkyHhZsJ96MDuOhNxA6bfZ2bzPV2iM2e6BFfHu0QfT4_r1Uvx9v78unp4KyyXVS5c01pTiZqAqBjQVpWiZtTZum6oci3nrQVgDljLSwK1tII5bp0slZPguORLdHPIDSl7nazP85c2DAPYrBnjRFJB_qgxhq8dpKy3YReHuZhmlFWClrIUM3V7oGwMKUVweoy-N3HSlOj9Dprq4w78FxqgfOk</recordid><startdate>20141028</startdate><enddate>20141028</enddate><creator>Nakasu, T.</creator><creator>Yamashita, S.</creator><creator>Aiba, T.</creator><creator>Hattori, S.</creator><creator>Sun, W.</creator><creator>Taguri, K.</creator><creator>Kazami, F.</creator><creator>Kobayashi, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20141028</creationdate><title>Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy</title><author>Nakasu, T. ; Yamashita, S. ; Aiba, T. ; Hattori, S. ; Sun, W. ; Taguri, K. ; Kazami, F. ; Kobayashi, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-fbdca6570e562e1d945721fc77b19fd33dcee2fe2d340e78c52f3cf849f8ef383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Crystal structure</topic><topic>CRYSTALLOGRAPHY</topic><topic>CRYSTALS</topic><topic>Heterostructures</topic><topic>LAYERS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>ORIENTATION</topic><topic>SAPPHIRE</topic><topic>SUBSTRATES</topic><topic>Terahertz frequencies</topic><topic>THIN FILMS</topic><topic>X-RAY DIFFRACTION</topic><topic>ZINC TELLURIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakasu, T.</creatorcontrib><creatorcontrib>Yamashita, S.</creatorcontrib><creatorcontrib>Aiba, T.</creatorcontrib><creatorcontrib>Hattori, S.</creatorcontrib><creatorcontrib>Sun, W.</creatorcontrib><creatorcontrib>Taguri, K.</creatorcontrib><creatorcontrib>Kazami, F.</creatorcontrib><creatorcontrib>Kobayashi, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakasu, T.</au><au>Yamashita, S.</au><au>Aiba, T.</au><au>Hattori, S.</au><au>Sun, W.</au><au>Taguri, K.</au><au>Kazami, F.</au><au>Kobayashi, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy</atitle><jtitle>Journal of applied physics</jtitle><date>2014-10-28</date><risdate>2014</risdate><volume>116</volume><issue>16</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4900739</doi><oa>free_for_read</oa></addata></record> |
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subjects | Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Crystal structure CRYSTALLOGRAPHY CRYSTALS Heterostructures LAYERS MOLECULAR BEAM EPITAXY ORIENTATION SAPPHIRE SUBSTRATES Terahertz frequencies THIN FILMS X-RAY DIFFRACTION ZINC TELLURIDES |
title | Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy |
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