Numerical simulations of epitaxial growth process in MOVPE reactor as a tool for design of modern semiconductors for high power electronics

In the present study numerical simulations of epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed. Epitaxial growth means crystal growth that progresses while inheriting the laminar structure and the orientation of substrate crystals. One of th...

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Bibliographische Detailangaben
Hauptverfasser:	Skibinski Jakub, Caban Piotr, Wejrzanowski Tomasz, Kurzydlowski, Krzysztof J
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemical reactions Computer simulation COMPUTERIZED SIMULATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Crystal growth Crystal structure CRYSTALS DESIGN Epitaxial growth GALLIUM NITRIDES GAS FLOW Growth rate HEAT Heat transfer MASS TRANSFER Mathematical models MATHEMATICAL SOLUTIONS Metalorganic chemical vapor deposition Organic chemistry ORGANOMETALLIC COMPOUNDS SEMICONDUCTOR MATERIALS Simulation SUBSTRATES VAPOR PHASE EPITAXY
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