A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images
A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determinati...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2014-09, Vol.116 (10) |
---|---|
Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 10 |
container_start_page | |
container_title | Journal of applied physics |
container_volume | 116 |
creator | Wu, Fangzhen Wang, Huanhuan Raghothamachar, Balaji Dudley, Michael Mueller, Stephan G. Chung, Gil Sanchez, Edward K. Hansen, Darren Loboda, Mark J. Zhang, Lihua Su, Dong Kisslinger, Kim Stach, Eric |
description | A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra. |
doi_str_mv | 10.1063/1.4895136 |
format | Article |
fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22305974</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22305974</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_223059743</originalsourceid><addsrcrecordid>eNqNjMtKxEAQRRtRMD4W_kGB64zdeUzSSxmU2Y_7IXYqSWm6S7s6A36Cf20EP8DVvQcOR6k7ozdGb8sHs6laW5tye6Yyo1ubN3Wtz1WmdWHy1jb2Ul2JvGltTFvaTH0_gsc0cQ-JoceE0VNAGLplTnBClzgKUIBqnx9oB0NkD5I6905hBMHPBYNDAX4VjCfsgQNMNE4QUXheEq2cYhfEk8gv4Lw243o8ucji-OMLyHcjyo26GLpZ8PZvr9X989PLbp-zJDqKo4RuchzCGjgWRalr21Tl_6wfjlxaAw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Wu, Fangzhen ; Wang, Huanhuan ; Raghothamachar, Balaji ; Dudley, Michael ; Mueller, Stephan G. ; Chung, Gil ; Sanchez, Edward K. ; Hansen, Darren ; Loboda, Mark J. ; Zhang, Lihua ; Su, Dong ; Kisslinger, Kim ; Stach, Eric</creator><creatorcontrib>Wu, Fangzhen ; Wang, Huanhuan ; Raghothamachar, Balaji ; Dudley, Michael ; Mueller, Stephan G. ; Chung, Gil ; Sanchez, Edward K. ; Hansen, Darren ; Loboda, Mark J. ; Zhang, Lihua ; Su, Dong ; Kisslinger, Kim ; Stach, Eric</creatorcontrib><description>A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4895136</identifier><language>eng</language><publisher>United States</publisher><subject>BURGERS VECTOR ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DISLOCATIONS ; RESOLUTION ; SILICON CARBIDES ; STACKING FAULTS ; TRANSMISSION ELECTRON MICROSCOPY ; X RADIATION</subject><ispartof>Journal of applied physics, 2014-09, Vol.116 (10)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22305974$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, Fangzhen</creatorcontrib><creatorcontrib>Wang, Huanhuan</creatorcontrib><creatorcontrib>Raghothamachar, Balaji</creatorcontrib><creatorcontrib>Dudley, Michael</creatorcontrib><creatorcontrib>Mueller, Stephan G.</creatorcontrib><creatorcontrib>Chung, Gil</creatorcontrib><creatorcontrib>Sanchez, Edward K.</creatorcontrib><creatorcontrib>Hansen, Darren</creatorcontrib><creatorcontrib>Loboda, Mark J.</creatorcontrib><creatorcontrib>Zhang, Lihua</creatorcontrib><creatorcontrib>Su, Dong</creatorcontrib><creatorcontrib>Kisslinger, Kim</creatorcontrib><creatorcontrib>Stach, Eric</creatorcontrib><title>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</title><title>Journal of applied physics</title><description>A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.</description><subject>BURGERS VECTOR</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DISLOCATIONS</subject><subject>RESOLUTION</subject><subject>SILICON CARBIDES</subject><subject>STACKING FAULTS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>X RADIATION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNjMtKxEAQRRtRMD4W_kGB64zdeUzSSxmU2Y_7IXYqSWm6S7s6A36Cf20EP8DVvQcOR6k7ozdGb8sHs6laW5tye6Yyo1ubN3Wtz1WmdWHy1jb2Ul2JvGltTFvaTH0_gsc0cQ-JoceE0VNAGLplTnBClzgKUIBqnx9oB0NkD5I6905hBMHPBYNDAX4VjCfsgQNMNE4QUXheEq2cYhfEk8gv4Lw243o8ucji-OMLyHcjyo26GLpZ8PZvr9X989PLbp-zJDqKo4RuchzCGjgWRalr21Tl_6wfjlxaAw</recordid><startdate>20140914</startdate><enddate>20140914</enddate><creator>Wu, Fangzhen</creator><creator>Wang, Huanhuan</creator><creator>Raghothamachar, Balaji</creator><creator>Dudley, Michael</creator><creator>Mueller, Stephan G.</creator><creator>Chung, Gil</creator><creator>Sanchez, Edward K.</creator><creator>Hansen, Darren</creator><creator>Loboda, Mark J.</creator><creator>Zhang, Lihua</creator><creator>Su, Dong</creator><creator>Kisslinger, Kim</creator><creator>Stach, Eric</creator><scope>OTOTI</scope></search><sort><creationdate>20140914</creationdate><title>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</title><author>Wu, Fangzhen ; Wang, Huanhuan ; Raghothamachar, Balaji ; Dudley, Michael ; Mueller, Stephan G. ; Chung, Gil ; Sanchez, Edward K. ; Hansen, Darren ; Loboda, Mark J. ; Zhang, Lihua ; Su, Dong ; Kisslinger, Kim ; Stach, Eric</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_223059743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BURGERS VECTOR</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DISLOCATIONS</topic><topic>RESOLUTION</topic><topic>SILICON CARBIDES</topic><topic>STACKING FAULTS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>X RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Fangzhen</creatorcontrib><creatorcontrib>Wang, Huanhuan</creatorcontrib><creatorcontrib>Raghothamachar, Balaji</creatorcontrib><creatorcontrib>Dudley, Michael</creatorcontrib><creatorcontrib>Mueller, Stephan G.</creatorcontrib><creatorcontrib>Chung, Gil</creatorcontrib><creatorcontrib>Sanchez, Edward K.</creatorcontrib><creatorcontrib>Hansen, Darren</creatorcontrib><creatorcontrib>Loboda, Mark J.</creatorcontrib><creatorcontrib>Zhang, Lihua</creatorcontrib><creatorcontrib>Su, Dong</creatorcontrib><creatorcontrib>Kisslinger, Kim</creatorcontrib><creatorcontrib>Stach, Eric</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Fangzhen</au><au>Wang, Huanhuan</au><au>Raghothamachar, Balaji</au><au>Dudley, Michael</au><au>Mueller, Stephan G.</au><au>Chung, Gil</au><au>Sanchez, Edward K.</au><au>Hansen, Darren</au><au>Loboda, Mark J.</au><au>Zhang, Lihua</au><au>Su, Dong</au><au>Kisslinger, Kim</au><au>Stach, Eric</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</atitle><jtitle>Journal of applied physics</jtitle><date>2014-09-14</date><risdate>2014</risdate><volume>116</volume><issue>10</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.</abstract><cop>United States</cop><doi>10.1063/1.4895136</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2014-09, Vol.116 (10) |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_osti_scitechconnect_22305974 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | BURGERS VECTOR CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DISLOCATIONS RESOLUTION SILICON CARBIDES STACKING FAULTS TRANSMISSION ELECTRON MICROSCOPY X RADIATION |
title | A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T12%3A37%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20method%20to%20determine%20fault%20vectors%20in%204H-SiC%20from%20stacking%20sequences%20observed%20on%20high%20resolution%20transmission%20electron%20microscopy%20images&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Wu,%20Fangzhen&rft.date=2014-09-14&rft.volume=116&rft.issue=10&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4895136&rft_dat=%3Costi%3E22305974%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |