A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determinati...

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Veröffentlicht in:Journal of applied physics 2014-09, Vol.116 (10)
Hauptverfasser: Wu, Fangzhen, Wang, Huanhuan, Raghothamachar, Balaji, Dudley, Michael, Mueller, Stephan G., Chung, Gil, Sanchez, Edward K., Hansen, Darren, Loboda, Mark J., Zhang, Lihua, Su, Dong, Kisslinger, Kim, Stach, Eric
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container_issue 10
container_start_page
container_title Journal of applied physics
container_volume 116
creator Wu, Fangzhen
Wang, Huanhuan
Raghothamachar, Balaji
Dudley, Michael
Mueller, Stephan G.
Chung, Gil
Sanchez, Edward K.
Hansen, Darren
Loboda, Mark J.
Zhang, Lihua
Su, Dong
Kisslinger, Kim
Stach, Eric
description A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.
doi_str_mv 10.1063/1.4895136
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fullrecord <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22305974</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22305974</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_223059743</originalsourceid><addsrcrecordid>eNqNjMtKxEAQRRtRMD4W_kGB64zdeUzSSxmU2Y_7IXYqSWm6S7s6A36Cf20EP8DVvQcOR6k7ozdGb8sHs6laW5tye6Yyo1ubN3Wtz1WmdWHy1jb2Ul2JvGltTFvaTH0_gsc0cQ-JoceE0VNAGLplTnBClzgKUIBqnx9oB0NkD5I6905hBMHPBYNDAX4VjCfsgQNMNE4QUXheEq2cYhfEk8gv4Lw243o8ucji-OMLyHcjyo26GLpZ8PZvr9X989PLbp-zJDqKo4RuchzCGjgWRalr21Tl_6wfjlxaAw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Wu, Fangzhen ; Wang, Huanhuan ; Raghothamachar, Balaji ; Dudley, Michael ; Mueller, Stephan G. ; Chung, Gil ; Sanchez, Edward K. ; Hansen, Darren ; Loboda, Mark J. ; Zhang, Lihua ; Su, Dong ; Kisslinger, Kim ; Stach, Eric</creator><creatorcontrib>Wu, Fangzhen ; Wang, Huanhuan ; Raghothamachar, Balaji ; Dudley, Michael ; Mueller, Stephan G. ; Chung, Gil ; Sanchez, Edward K. ; Hansen, Darren ; Loboda, Mark J. ; Zhang, Lihua ; Su, Dong ; Kisslinger, Kim ; Stach, Eric</creatorcontrib><description>A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4895136</identifier><language>eng</language><publisher>United States</publisher><subject>BURGERS VECTOR ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DISLOCATIONS ; RESOLUTION ; SILICON CARBIDES ; STACKING FAULTS ; TRANSMISSION ELECTRON MICROSCOPY ; X RADIATION</subject><ispartof>Journal of applied physics, 2014-09, Vol.116 (10)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22305974$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, Fangzhen</creatorcontrib><creatorcontrib>Wang, Huanhuan</creatorcontrib><creatorcontrib>Raghothamachar, Balaji</creatorcontrib><creatorcontrib>Dudley, Michael</creatorcontrib><creatorcontrib>Mueller, Stephan G.</creatorcontrib><creatorcontrib>Chung, Gil</creatorcontrib><creatorcontrib>Sanchez, Edward K.</creatorcontrib><creatorcontrib>Hansen, Darren</creatorcontrib><creatorcontrib>Loboda, Mark J.</creatorcontrib><creatorcontrib>Zhang, Lihua</creatorcontrib><creatorcontrib>Su, Dong</creatorcontrib><creatorcontrib>Kisslinger, Kim</creatorcontrib><creatorcontrib>Stach, Eric</creatorcontrib><title>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</title><title>Journal of applied physics</title><description>A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.</description><subject>BURGERS VECTOR</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DISLOCATIONS</subject><subject>RESOLUTION</subject><subject>SILICON CARBIDES</subject><subject>STACKING FAULTS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>X RADIATION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNjMtKxEAQRRtRMD4W_kGB64zdeUzSSxmU2Y_7IXYqSWm6S7s6A36Cf20EP8DVvQcOR6k7ozdGb8sHs6laW5tye6Yyo1ubN3Wtz1WmdWHy1jb2Ul2JvGltTFvaTH0_gsc0cQ-JoceE0VNAGLplTnBClzgKUIBqnx9oB0NkD5I6905hBMHPBYNDAX4VjCfsgQNMNE4QUXheEq2cYhfEk8gv4Lw243o8ucji-OMLyHcjyo26GLpZ8PZvr9X989PLbp-zJDqKo4RuchzCGjgWRalr21Tl_6wfjlxaAw</recordid><startdate>20140914</startdate><enddate>20140914</enddate><creator>Wu, Fangzhen</creator><creator>Wang, Huanhuan</creator><creator>Raghothamachar, Balaji</creator><creator>Dudley, Michael</creator><creator>Mueller, Stephan G.</creator><creator>Chung, Gil</creator><creator>Sanchez, Edward K.</creator><creator>Hansen, Darren</creator><creator>Loboda, Mark J.</creator><creator>Zhang, Lihua</creator><creator>Su, Dong</creator><creator>Kisslinger, Kim</creator><creator>Stach, Eric</creator><scope>OTOTI</scope></search><sort><creationdate>20140914</creationdate><title>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</title><author>Wu, Fangzhen ; Wang, Huanhuan ; Raghothamachar, Balaji ; Dudley, Michael ; Mueller, Stephan G. ; Chung, Gil ; Sanchez, Edward K. ; Hansen, Darren ; Loboda, Mark J. ; Zhang, Lihua ; Su, Dong ; Kisslinger, Kim ; Stach, Eric</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_223059743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BURGERS VECTOR</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DISLOCATIONS</topic><topic>RESOLUTION</topic><topic>SILICON CARBIDES</topic><topic>STACKING FAULTS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>X RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Fangzhen</creatorcontrib><creatorcontrib>Wang, Huanhuan</creatorcontrib><creatorcontrib>Raghothamachar, Balaji</creatorcontrib><creatorcontrib>Dudley, Michael</creatorcontrib><creatorcontrib>Mueller, Stephan G.</creatorcontrib><creatorcontrib>Chung, Gil</creatorcontrib><creatorcontrib>Sanchez, Edward K.</creatorcontrib><creatorcontrib>Hansen, Darren</creatorcontrib><creatorcontrib>Loboda, Mark J.</creatorcontrib><creatorcontrib>Zhang, Lihua</creatorcontrib><creatorcontrib>Su, Dong</creatorcontrib><creatorcontrib>Kisslinger, Kim</creatorcontrib><creatorcontrib>Stach, Eric</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Fangzhen</au><au>Wang, Huanhuan</au><au>Raghothamachar, Balaji</au><au>Dudley, Michael</au><au>Mueller, Stephan G.</au><au>Chung, Gil</au><au>Sanchez, Edward K.</au><au>Hansen, Darren</au><au>Loboda, Mark J.</au><au>Zhang, Lihua</au><au>Su, Dong</au><au>Kisslinger, Kim</au><au>Stach, Eric</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images</atitle><jtitle>Journal of applied physics</jtitle><date>2014-09-14</date><risdate>2014</risdate><volume>116</volume><issue>10</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.</abstract><cop>United States</cop><doi>10.1063/1.4895136</doi></addata></record>
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subjects BURGERS VECTOR
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DISLOCATIONS
RESOLUTION
SILICON CARBIDES
STACKING FAULTS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
title A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T12%3A37%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20method%20to%20determine%20fault%20vectors%20in%204H-SiC%20from%20stacking%20sequences%20observed%20on%20high%20resolution%20transmission%20electron%20microscopy%20images&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Wu,%20Fangzhen&rft.date=2014-09-14&rft.volume=116&rft.issue=10&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4895136&rft_dat=%3Costi%3E22305974%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true