Metal-insulator transitions in IZO, IGZO, and ITZO films

In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator tran...

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Veröffentlicht in:	Journal of applied physics 2014-10, Vol.116 (15)
Hauptverfasser:	Makise, Kazumasa, Hidaka, Kazuya, Ezaki, Syohei, Asano, Takayuki, Shinozaki, Bunju, Tomai, Shigekazu, Yano, Koki, Nakamura, Hiroaki
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE Applied physics CARRIER DENSITY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Conduction cooling Crossovers ELECTRIC CONDUCTIVITY ELECTRONS Gallium GALLIUM OXIDES Hopping conduction Indium Indium gallium zinc oxide INDIUM OXIDES Insulators MEAN FREE PATH Metal-insulator transition Oxide coatings PHASE TRANSFORMATIONS TIN OXIDES Titanium nitride ZINC OXIDES
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