Metal-insulator transitions in IZO, IGZO, and ITZO films
In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator tran...
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| Veröffentlicht in: | Journal of applied physics 2014-10, Vol.116 (15) |
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| container_title | Journal of applied physics |
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| creator | Makise, Kazumasa Hidaka, Kazuya Ezaki, Syohei Asano, Takayuki Shinozaki, Bunju Tomai, Shigekazu Yano, Koki Nakamura, Hiroaki |
| description | In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between kFℓ = 0.13 and kFℓ = 0.25, where kF and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3. |
| doi_str_mv | 10.1063/1.4897501 |
| format | Article |
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To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between kFℓ = 0.13 and kFℓ = 0.25, where kF and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4897501</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>AMORPHOUS STATE ; Applied physics ; CARRIER DENSITY ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Conduction cooling ; Crossovers ; ELECTRIC CONDUCTIVITY ; ELECTRONS ; Gallium ; GALLIUM OXIDES ; Hopping conduction ; Indium ; Indium gallium zinc oxide ; INDIUM OXIDES ; Insulators ; MEAN FREE PATH ; Metal-insulator transition ; Oxide coatings ; PHASE TRANSFORMATIONS ; TIN OXIDES ; Titanium nitride ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2014-10, Vol.116 (15)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-51ca247ba6b0b3a6600173f9cc98c77ee4551083ebad14c8e2b60d0d4eb013103</citedby><cites>FETCH-LOGICAL-c351t-51ca247ba6b0b3a6600173f9cc98c77ee4551083ebad14c8e2b60d0d4eb013103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886,27926,27927</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22305823$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Makise, Kazumasa</creatorcontrib><creatorcontrib>Hidaka, Kazuya</creatorcontrib><creatorcontrib>Ezaki, Syohei</creatorcontrib><creatorcontrib>Asano, Takayuki</creatorcontrib><creatorcontrib>Shinozaki, Bunju</creatorcontrib><creatorcontrib>Tomai, Shigekazu</creatorcontrib><creatorcontrib>Yano, Koki</creatorcontrib><creatorcontrib>Nakamura, Hiroaki</creatorcontrib><title>Metal-insulator transitions in IZO, IGZO, and ITZO films</title><title>Journal of applied physics</title><description>In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between kFℓ = 0.13 and kFℓ = 0.25, where kF and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3.</description><subject>AMORPHOUS STATE</subject><subject>Applied physics</subject><subject>CARRIER DENSITY</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Conduction cooling</subject><subject>Crossovers</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRONS</subject><subject>Gallium</subject><subject>GALLIUM OXIDES</subject><subject>Hopping conduction</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>INDIUM OXIDES</subject><subject>Insulators</subject><subject>MEAN FREE PATH</subject><subject>Metal-insulator transition</subject><subject>Oxide coatings</subject><subject>PHASE TRANSFORMATIONS</subject><subject>TIN OXIDES</subject><subject>Titanium nitride</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkDFPwzAUhC0EEqUw8A8iMSGR8p4dO8mIKloiFXUpSxfLcRzhKrWL7Q78e1K1Esu74X26Ox0hjwgzBMFecVZUdckBr8gEoarzknO4JhMAivn4qW_JXYw7AMSK1RNSfZqkhty6eBxU8iFLQblok_UuZtZlzXb9kjXL01Wuy5rNdp31dtjHe3LTqyGah4tOydfifTP_yFfrZTN_W-WacUw5R61oUbZKtNAyJcSYXLK-1rqudFkaU3A-9mSmVR0WujK0FdBBV5gWkCGwKXk6-_qYrIzaJqO_tXfO6CQpZcAryv6pQ_A_RxOT3PljcGMxSZEKTkUt6Eg9nykdfIzB9PIQ7F6FX4kgT_NJlJf52B_vPV3c</recordid><startdate>20141021</startdate><enddate>20141021</enddate><creator>Makise, Kazumasa</creator><creator>Hidaka, Kazuya</creator><creator>Ezaki, Syohei</creator><creator>Asano, Takayuki</creator><creator>Shinozaki, Bunju</creator><creator>Tomai, Shigekazu</creator><creator>Yano, Koki</creator><creator>Nakamura, Hiroaki</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20141021</creationdate><title>Metal-insulator transitions in IZO, IGZO, and ITZO films</title><author>Makise, Kazumasa ; Hidaka, Kazuya ; Ezaki, Syohei ; Asano, Takayuki ; Shinozaki, Bunju ; Tomai, Shigekazu ; Yano, Koki ; Nakamura, Hiroaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-51ca247ba6b0b3a6600173f9cc98c77ee4551083ebad14c8e2b60d0d4eb013103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>AMORPHOUS STATE</topic><topic>Applied physics</topic><topic>CARRIER DENSITY</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Conduction cooling</topic><topic>Crossovers</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRONS</topic><topic>Gallium</topic><topic>GALLIUM OXIDES</topic><topic>Hopping conduction</topic><topic>Indium</topic><topic>Indium gallium zinc oxide</topic><topic>INDIUM OXIDES</topic><topic>Insulators</topic><topic>MEAN FREE PATH</topic><topic>Metal-insulator transition</topic><topic>Oxide coatings</topic><topic>PHASE TRANSFORMATIONS</topic><topic>TIN OXIDES</topic><topic>Titanium nitride</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Makise, Kazumasa</creatorcontrib><creatorcontrib>Hidaka, Kazuya</creatorcontrib><creatorcontrib>Ezaki, Syohei</creatorcontrib><creatorcontrib>Asano, Takayuki</creatorcontrib><creatorcontrib>Shinozaki, Bunju</creatorcontrib><creatorcontrib>Tomai, Shigekazu</creatorcontrib><creatorcontrib>Yano, Koki</creatorcontrib><creatorcontrib>Nakamura, Hiroaki</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Makise, Kazumasa</au><au>Hidaka, Kazuya</au><au>Ezaki, Syohei</au><au>Asano, Takayuki</au><au>Shinozaki, Bunju</au><au>Tomai, Shigekazu</au><au>Yano, Koki</au><au>Nakamura, Hiroaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metal-insulator transitions in IZO, IGZO, and ITZO films</atitle><jtitle>Journal of applied physics</jtitle><date>2014-10-21</date><risdate>2014</risdate><volume>116</volume><issue>15</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between kFℓ = 0.13 and kFℓ = 0.25, where kF and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4897501</doi></addata></record> |
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| subjects | AMORPHOUS STATE Applied physics CARRIER DENSITY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Conduction cooling Crossovers ELECTRIC CONDUCTIVITY ELECTRONS Gallium GALLIUM OXIDES Hopping conduction Indium Indium gallium zinc oxide INDIUM OXIDES Insulators MEAN FREE PATH Metal-insulator transition Oxide coatings PHASE TRANSFORMATIONS TIN OXIDES Titanium nitride ZINC OXIDES |
| title | Metal-insulator transitions in IZO, IGZO, and ITZO films |
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