Analytical model of electron transport in polycrystalline, degenerately doped ZnO films
An analytical description of the charge carrier transport, valid for non-degenerated and degenerated semiconductors, was developed, critically reviewed, and fitted to the temperature-dependent Hall mobility data of magnetron sputtered, degenerately doped ZnO:Al films. Our extended model for grain bo...
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| Veröffentlicht in: | Journal of applied physics 2014-10, Vol.116 (14) |
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| creator | Bikowski, André Ellmer, Klaus |
| description | An analytical description of the charge carrier transport, valid for non-degenerated and degenerated semiconductors, was developed, critically reviewed, and fitted to the temperature-dependent Hall mobility data of magnetron sputtered, degenerately doped ZnO:Al films. Our extended model for grain boundary scattering in semiconductors of arbitrary degeneracy is based on previous models from literature and suitable to describe the Hall mobility of the carriers as a function of the free carrier concentration and the temperature at the same time. It is mathematically simple enough for a fast fit procedure, which is not possible with most of the previous models. Applying a combined transport model consisting of ionized impurity scattering, phonon scattering, and grain boundary scattering in degenerate semiconductors, we were able to determine the trap density at the grain boundaries Nt ≈ 3 × 1013 to 5 × 1013 cm−2 and the deformation potential Eac in the range of 5 eV to 9 eV depending on the details of the transport model. |
| doi_str_mv | 10.1063/1.4896839 |
| format | Article |
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Our extended model for grain boundary scattering in semiconductors of arbitrary degeneracy is based on previous models from literature and suitable to describe the Hall mobility of the carriers as a function of the free carrier concentration and the temperature at the same time. It is mathematically simple enough for a fast fit procedure, which is not possible with most of the previous models. Applying a combined transport model consisting of ionized impurity scattering, phonon scattering, and grain boundary scattering in degenerate semiconductors, we were able to determine the trap density at the grain boundaries Nt ≈ 3 × 1013 to 5 × 1013 cm−2 and the deformation potential Eac in the range of 5 eV to 9 eV depending on the details of the transport model.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4896839</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM COMPOUNDS ; Applied physics ; Carrier density ; CARRIER MOBILITY ; Carrier transport ; CHARGE CARRIERS ; Charge transport ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Current carriers ; DEFORMATION ; DOPED MATERIALS ; Electron mobility ; Electron transport ; GRAIN BOUNDARIES ; Hall effect ; IMPURITIES ; MAGNETRONS ; POLYCRYSTALS ; SCATTERING ; SEMICONDUCTOR MATERIALS ; Semiconductors ; SIMULATION ; SPUTTERING ; TEMPERATURE DEPENDENCE ; TRAPS ; Zinc oxide ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2014-10, Vol.116 (14)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-1298d909921dcb70f1e73b873a808025feb99b1f8c5217106b38fc0ec87ec4fb3</citedby><cites>FETCH-LOGICAL-c285t-1298d909921dcb70f1e73b873a808025feb99b1f8c5217106b38fc0ec87ec4fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22305791$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bikowski, André</creatorcontrib><creatorcontrib>Ellmer, Klaus</creatorcontrib><title>Analytical model of electron transport in polycrystalline, degenerately doped ZnO films</title><title>Journal of applied physics</title><description>An analytical description of the charge carrier transport, valid for non-degenerated and degenerated semiconductors, was developed, critically reviewed, and fitted to the temperature-dependent Hall mobility data of magnetron sputtered, degenerately doped ZnO:Al films. Our extended model for grain boundary scattering in semiconductors of arbitrary degeneracy is based on previous models from literature and suitable to describe the Hall mobility of the carriers as a function of the free carrier concentration and the temperature at the same time. It is mathematically simple enough for a fast fit procedure, which is not possible with most of the previous models. Applying a combined transport model consisting of ionized impurity scattering, phonon scattering, and grain boundary scattering in degenerate semiconductors, we were able to determine the trap density at the grain boundaries Nt ≈ 3 × 1013 to 5 × 1013 cm−2 and the deformation potential Eac in the range of 5 eV to 9 eV depending on the details of the transport model.</description><subject>ALUMINIUM COMPOUNDS</subject><subject>Applied physics</subject><subject>Carrier density</subject><subject>CARRIER MOBILITY</subject><subject>Carrier transport</subject><subject>CHARGE CARRIERS</subject><subject>Charge transport</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Current carriers</subject><subject>DEFORMATION</subject><subject>DOPED MATERIALS</subject><subject>Electron mobility</subject><subject>Electron transport</subject><subject>GRAIN BOUNDARIES</subject><subject>Hall effect</subject><subject>IMPURITIES</subject><subject>MAGNETRONS</subject><subject>POLYCRYSTALS</subject><subject>SCATTERING</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>Semiconductors</subject><subject>SIMULATION</subject><subject>SPUTTERING</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TRAPS</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkMtKAzEYRoMoWC8L3yDgSnBqLk2TLIt4g0I3iuAmZDJ_dEqajElczNs70oKrb3P44ByEriiZU7Lkd3S-UHqpuD5CM0qUbqQQ5BjNCGG0UVrqU3RWypYQSidoht5X0Yax9s4GvEsdBJw8hgCu5hRxzTaWIeWK-4iHFEaXx1JtCH2EW9zBJ0TItkIYcZcG6PBH3GDfh125QCfehgKXhz1Hb48Pr_fPzXrz9HK_WjeOKVEbyrTqNNGa0c61kngKkrdKcquIIkx4aLVuqVdOMConw5Yr7wg4JcEtfMvP0fX-N5Xam-L6Cu7LpRgnA8MYJ0Jq-k8NOX3_QKlmm37yZF4Mo2wpmOCcTdTNnnI5lZLBmyH3O5tHQ4n5q2uoOdTlv5sVa6Y</recordid><startdate>20141014</startdate><enddate>20141014</enddate><creator>Bikowski, André</creator><creator>Ellmer, Klaus</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20141014</creationdate><title>Analytical model of electron transport in polycrystalline, degenerately doped ZnO films</title><author>Bikowski, André ; Ellmer, Klaus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-1298d909921dcb70f1e73b873a808025feb99b1f8c5217106b38fc0ec87ec4fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALUMINIUM COMPOUNDS</topic><topic>Applied physics</topic><topic>Carrier density</topic><topic>CARRIER MOBILITY</topic><topic>Carrier transport</topic><topic>CHARGE CARRIERS</topic><topic>Charge transport</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Current carriers</topic><topic>DEFORMATION</topic><topic>DOPED MATERIALS</topic><topic>Electron mobility</topic><topic>Electron transport</topic><topic>GRAIN BOUNDARIES</topic><topic>Hall effect</topic><topic>IMPURITIES</topic><topic>MAGNETRONS</topic><topic>POLYCRYSTALS</topic><topic>SCATTERING</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>Semiconductors</topic><topic>SIMULATION</topic><topic>SPUTTERING</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TRAPS</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bikowski, André</creatorcontrib><creatorcontrib>Ellmer, Klaus</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bikowski, André</au><au>Ellmer, Klaus</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analytical model of electron transport in polycrystalline, degenerately doped ZnO films</atitle><jtitle>Journal of applied physics</jtitle><date>2014-10-14</date><risdate>2014</risdate><volume>116</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>An analytical description of the charge carrier transport, valid for non-degenerated and degenerated semiconductors, was developed, critically reviewed, and fitted to the temperature-dependent Hall mobility data of magnetron sputtered, degenerately doped ZnO:Al films. Our extended model for grain boundary scattering in semiconductors of arbitrary degeneracy is based on previous models from literature and suitable to describe the Hall mobility of the carriers as a function of the free carrier concentration and the temperature at the same time. It is mathematically simple enough for a fast fit procedure, which is not possible with most of the previous models. Applying a combined transport model consisting of ionized impurity scattering, phonon scattering, and grain boundary scattering in degenerate semiconductors, we were able to determine the trap density at the grain boundaries Nt ≈ 3 × 1013 to 5 × 1013 cm−2 and the deformation potential Eac in the range of 5 eV to 9 eV depending on the details of the transport model.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4896839</doi></addata></record> |
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| ispartof | Journal of applied physics, 2014-10, Vol.116 (14) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | ALUMINIUM COMPOUNDS Applied physics Carrier density CARRIER MOBILITY Carrier transport CHARGE CARRIERS Charge transport CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current carriers DEFORMATION DOPED MATERIALS Electron mobility Electron transport GRAIN BOUNDARIES Hall effect IMPURITIES MAGNETRONS POLYCRYSTALS SCATTERING SEMICONDUCTOR MATERIALS Semiconductors SIMULATION SPUTTERING TEMPERATURE DEPENDENCE TRAPS Zinc oxide ZINC OXIDES |
| title | Analytical model of electron transport in polycrystalline, degenerately doped ZnO films |
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