On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

In this article, we investigate extensively the bipolar-switching properties of Al2O3- and HfO2-based resistive-switching memory cells operated at low current down to 15 μA), which we relate as intrinsic to soft-breakdown (SBD) regime. We evidence a larger impact of the used switching-oxide in this...

Ausführliche Beschreibung